Ka-band GaAs MMIC LNA using a 0.15um metamorphic InGaAs

Khan, Mehdi; Khan, Muhammad Usman Ali; Zhou, Peng; Buzdar, Abdul Rehman; Buzdar, Abdullah; Li, Lei; Lin, Fujiang

doi:10.1109/ieee-iws.2016.7585485

Cited by 7 publications

(1 citation statement)

References 2 publications

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“…As the first stage in a receiving chain, a low noise amplifier (LNA) is one of the most critical active components in the front-end receiver of any communication system [1][2][3][4]. Since the signal received at the input of a receiver is quite weak, the common goals in designing an LNA are to achieve low noise figure (NF), reasonable gain, high linearity, as well as low power consumption, and finally to expand the dynamic range and improve the sensitivity of a receiver system [5].…”

Section: Introductionmentioning

confidence: 99%

A Q-Band Current-Reused Low Noise Amplifier With Simultaneous Noise and Input Matching

Xie¹,

Wu²,

Zhou³

et al. 2021

PIER C

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In this paper, a Q-band GaAs low noise amplifier (LNA) for satellite communications is presented. The LNA is designed using common-source (CS) topology, self-biased configuration, and current-reused technology. Simultaneous noise and input matching are achieved by employing source series inductance. The current-reused LNA is fabricated in a 90 nm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. On-wafer measurement results show that the LNA features a small-signal gain of 23.8 ∼ 24.5 dB, noise figure (NF) of 2 ∼ 2.1 dB, and output 1-dB compression point (OP1 dB) of 6.6 ∼ 8 dBm over 36 ∼ 42 GHz, while consuming 10.9 mA with a supply voltage of 5 V. The chip size is 1.6 × 0.8 mm 2 including all RF and dc pads.

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Section: Introductionmentioning

confidence: 99%

A Q-Band Current-Reused Low Noise Amplifier With Simultaneous Noise and Input Matching

Xie¹,

Wu²,

Zhou³

et al. 2021

PIER C

View full text Add to dashboard Cite

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A straightforward design technique for narrowband multi‐stage low‐noise amplifiers with I/O conjugate match

Salvucci

Longhi

Colangeli

et al. 2019

Int J RF Microw Comput Aided Eng

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Low‐noise amplifier (LNA) designers often struggle to simultaneously satisfy gain, noise, stability, and I/O matching requirements. In this article, a novel design technique, tailored for two‐stage low‐noise amplifiers, is presented. The proposed design method is completely deterministic and exploits inductive source degeneration to obtain a two‐stage LNA featuring perfect input and output match together with low noise figure (NF) and a pre‐determined gain, including stability analysis. A novel flowchart is provided together with the corresponding design chart that contains gain, matching, and stability information, therefore addressing all key figures‐of‐merit of a linear amplifier. The design chart is easily implementable in commercial Electronic Design Automation software, to aid designers in the difficult task of selecting the appropriate source degeneration inductor value. The noise performance, on the other hand, is the best possible since the matching networks are designed to provide the input of the two Field Effect Transistors with the optimum termination for noise. The design method is validated with two separate test vehicles operating respectively at Ka‐band (26.5‐31.5 GHz) and K‐band (20.0‐24.0 GHz). The realized Monolithic Microwave Integrated Circuits exhibit 18 dB gain for both versions, NF of 1.5 and 1.2 dB, respectively for the Ka‐band and K‐band version. Input and output matching are typically better than 12 and 15 dB.

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A broadband low noise amplifier in 70nm GaAs MHEMT process

Guan

Gong

Gao

et al. 2019

J. Phys.: Conf. Ser.

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In this paper, a broadband low noise amplifier (LNA) is presented with 70nm GaAs metamorphic high electron mobility transistor (MHEMT) process. The feedback and input/output impedance match techniques for broadband amplifier are presented. The stability, noise figure, gain flatness, and S-parameter performance of this LNA are analyzed and discussed. The small signal gain of the LNA is 20dB±0.2dB and noise figure of 0.86dB~1.35dB among operating from almost DC to 15GHz. This LNA exhibits reflection below -10dB, power dissipation of 70mW and chip area of 1.0mm*0.6mm. This LNA finds its application in many wideband systems.

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Ka-band GaAs MMIC LNA using a 0.15um metamorphic InGaAs

Cited by 7 publications

References 2 publications

A Q-Band Current-Reused Low Noise Amplifier With Simultaneous Noise and Input Matching

A Q-Band Current-Reused Low Noise Amplifier With Simultaneous Noise and Input Matching

A straightforward design technique for narrowband multi‐stage low‐noise amplifiers with I/O conjugate match

A broadband low noise amplifier in 70nm GaAs MHEMT process

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