Ka band High RF performance AlGaN/GaN HEMTs

Zhang, Lijiang; Fu, Xiuqing; Peng-bo, DU; Cui, Yuxing; Li, Xianjie; Zhang, Tong

doi:10.1088/1755-1315/170/4/042021

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…[1][2][3][4][5] At present, owing to the sophisticated production process and high cost of GaN, most of the mature GaN HEMTs on the market are grown heteroepitaxially on sapphire and SiC due to their relatively small difference in lattice parameters and thermal expansion coefficient. [6][7][8][9][10] By comparison, Si substrates have the advantages of low cost, high crystal quality, large size, and relatively mature process conditions, which makes them more and more competitive. [11][12][13] However, a large amount of heat is generated and accumulated while outputting high power, [14,15] accompanied by the rapid deterioration of the output power density and efficiency, and even the transistor failure, remaining a significant issue in reliability.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate*

et al. 2020

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We have successfully prepared GaN based high electron mobility transistors (HEMTs) on metallic substrates transferred from silicon substrates by electroplating technique. GaN HEMTs on Cu substrates are demonstrated to basically have the same good electric characteristics as the chips on Si substrates. Furthermore, the better heat dissipation of HEMTs on Cu substrates compared to HEMTs on Si substrates is clearly observed by thermoreflectance imaging, showing the promising potential for very high-power and high-temperature operation. This work shows the outstanding ability of HEMT chips on Cu substrates for solving the self-heating effect with the advantages of process simplicity, high yield, and low production requirement.

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