Karl Bädeker (1877-1914) and the discovery of transparent conductive materials

Grundmann, Marius

doi:10.1002/pssa.201431921

Cited by 22 publications

(13 citation statements)

References 43 publications

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“…Interestingly, one of the first transparent conductors, discovered by Karl Baedeker in 1907, was a nonoxide, p-type degenerate semiconductor, CuI. [76,77] Non-oxide wide-gap (direct and indirect) semiconductors with P, S, or N anions are attractive candidates for p-type materials discovery as their valence bands are more delocalized, leading to a lower hole effective mass. [59,78] This approach has been demonstrated experimentally with Cu-based p-type transparent chalcogenides (S, Se, Te) and oxychalcogenides, most notably CuAlS 2 , BaCu 2 S 2 , BaCu 2 (S, Se)F, and Cu-Zn-S, resolving one of the issues with the localized O 2p orbital and, upon optimization, reaching conductivities greater than 10 S cm −1 .…”

Section: P-type Transparent Conductorsmentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

364

288

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With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano‐ and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light‐emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

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Section: P-type Transparent Conductorsmentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

364

288

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“…19 Ongoing social and technological development such as the increasing adoption of renewable energy sources and the continual growth of emerging economies therefore means that demand for TCOs is set to increase further and faster still. 21 As the earliest recorded instance of a TCO, it was not optimal and did not exhibit resistivities anywhere near as low as pure metals, and would fully oxidise with time to yield the insulating wide band-gap semiconductor. TCOs were first reported in 1907 by German physicist Karl Baedeker, who sputter-coated cadmium onto a substrate followed by heat treatment in air to yield a cadmium oxide TCO.…”

Section: Introductionmentioning

confidence: 99%

n-Type doped transparent conducting binary oxides: an overview

et al. 2016

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This article focuses on n-type doped transparent conducting binary oxides -namely, those with the general formula M x O y :D, where M x O y is the host oxide material and D is the dopant element. Such materials are of great industrial importance in modern materials chemistry. In particular, there is a focus on the search for alternatives to indium-based materials, prompted by indium's problematic supply risk as well as a number of functional factors. The important relationship between computational study and experimental observation is explored, and an extensive comparison is made between the electrical properties of a number of the most interesting experimentally-prepared materials. In writing this article, we aim to provide both an accessible tutorial of the physical descriptions of transparent conducting oxides, and an up-to-date overview of the field, with a brief history, some key accomplishments from the past few decades, the current state of the field as well as postulation on some likely future developments.

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“…The first one who fabricated transparent conductive CuI as early as 1907 was Karl Bädeker using a iodization routine for copper thin films, making it the first transparent conductive material discovered. In recent times, there are reports on γ‐CuI thin films grown via reactive sputtering of Cu‐targets, RF‐DC‐sputtering of γ‐CuI targets, thermal evaporation, atomizer techniques, metal–organic chemical vapor deposition, laser‐assisted molecular beam epitaxy, the Bädeker iodization routine, pulsed laser deposition, a solid iodination method, or coating techniques .…”

Section: Introductionmentioning

confidence: 99%

Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents

Kneiß

Yang

Barzola‐Quiquia

et al. 2018

Adv Materials Inter

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Transparent p‐type conductive γ‐CuI thin films typically exhibit unexpectedly high hole mobilities in the range of 10 cm2 V−1 s−1 even when heavily textured. To explain this phenomenon, the transport properties of such thin films are investigated. The temperature‐dependent resistivities of the textured (111)‐oriented films with different carrier concentration are fitted using the fluctuation‐induced tunneling conductivity (FITC) model in series with a power law. The FITC model describes barriers at the grain boundaries whereas the power law considers the scattering in the metallic interior of the grains. Magnetoresistance measurements performed on a reactively DC‐sputtered thin film at low temperatures (T < 8 K) suggest a 2D weak antilocalization effect with phase coherence lengths of about 50 nm. This is corroborated by a typical logarithmic temperature dependence of the zero‐field conductance. An n‐type inversion layer or a defect band at the interfaces of the grains as origin of the 2D carrier system and the barriers at the grain boundaries is proposed. This leads to a conclusive description of the electrical transport properties of γ‐CuI thin films and explains the high hole mobilities which are due to a suppressed backscattering at the grain boundaries in the presence of tunneling channels.

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Karl Bädeker (1877-1914) and the discovery of transparent conductive materials

Cited by 22 publications

References 43 publications

Transparent Electrodes for Efficient Optoelectronics

Transparent Electrodes for Efficient Optoelectronics

n-Type doped transparent conducting binary oxides: an overview

Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents

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