2004
DOI: 10.1002/pssa.200404346
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Kelvin probe study of band bending at organic semiconductor/metal interfaces: examination of Fermi level alignment

Abstract: Band bending is a fundamental issue for discussing organic devices. Band bending with Fermi level alignment between semiconductors and metals are often assumed, although the validity of this scheme in the case of organic semiconductors has been not yet established. In this paper, our recent efforts to examine band bending in organic semiconductors using Kelvin probe method (KPM) are reported. After discussing the applicability of KPM to organic thick film -metal substrate system, the results for C 60 , TPD, an… Show more

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Cited by 232 publications
(183 citation statements)
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“…Alternative techniques like Kelvin probe [11], and ultraviolet photoelectron spectroscopy [12] have given further evidence of the formation of depletion zones at metal/organic contacts with the corresponding band bending caused by the presence of impurity levels.…”
Section: Introductionmentioning
confidence: 99%
“…Alternative techniques like Kelvin probe [11], and ultraviolet photoelectron spectroscopy [12] have given further evidence of the formation of depletion zones at metal/organic contacts with the corresponding band bending caused by the presence of impurity levels.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, the techniques avoid the direct surface contact, which enables in-depth investigations in a non-invasive way. In particular, KPFM is powerful to study surface work function, [18][19][20] band bending and interfacial dipole, [21][22][23][24][25] and also employed to quantitatively evaluate charge quantity trapped in insulators. [26][27][28][29][30] In this report, KPFM is used to simulate programming/ erasing process and directly profile charge trapping into the nano-floating-gate in a pentacene-based OFET nonvolatile memory.…”
mentioning
confidence: 99%
“…5, the relationship between surface potential and film thickness is plotted based on the results obtained through the topographic and surface-potential images. The dotted line in the diagram shows the calculated surface potential variation curve [24,25], assuming the existence of the space-charge layer [15]. Thus, in the PCBM film layer, both the width of the space charge and the decrease in surface potential with increasing thickness are in good agreement with the band bending [26,27].…”
Section: B Energy Band Diagram With Band Bending In the Pcbm Layermentioning
confidence: 55%
“…A study of the microscopic phenomena at the interface is crucial to elucidate the mechanisms by which these devices operate. An understanding of these mechanisms is necessary not only for the improvement of the conversion efficiency but also for the development of new materials for organic semiconductor devices [14,15]. Therefore, it is clear that approaches based on microscopic study are essential in the development of OSCs.…”
Section: Introductionmentioning
confidence: 99%