Key Components of Modular Propulsion Systems for Next Generation Electric Vehicles

Stippich, Alexander; Broeck, Christoph H. van der; Sewergin, Alexander; Wienhausen, Arne Hendrik; Neubert, Markus; Schülting, Philipp; Taraborrelli, Silvano; Hoek, Hauke van; Doncker, Rik W. De

doi:10.24295/cpsstpea.2017.00023

Cited by 108 publications

(28 citation statements)

References 29 publications

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“…In a first step, the time behaviour of the DC link voltage u DC is formulated. To this end, the maximum instantaneous lineto-line motor voltage is required which based on (1) has a sixpulse shape and is (2) where u m,max (t) = max {u m,a , u m,b , u m,c } and u m,min (t) = min {u m,a , u m,b , u m,c }. The DC link voltage is subsequently derived (cf., Fig.…”

Section: Operation Principlementioning

confidence: 99%

Analysis of a Synergetically Controlled Two-Stage Three-Phase DC/AC Buck-Boost Converter

et al. 2020

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Three-phase DC/AC power electronics converter systems used in battery-powered variable-speed drive systems or employed in three-phase mains-supplied battery charger applications usually feature two power conversion stages. In both cases, typically a DC/DC stage is attached to a three-phase DC/ AC stage in order to enable buck-boost functionality and/or a wide input-output voltage operating range. However, a two-stage solution leads to a high number of switched bridge-legs and hence, results in high switching losses, if the degrees of freedom available for controlling the overall system are not utilised. If the DC/DC stage is used to vary the DC link voltage with six times the ACside frequency, a pulse width modulation (PWM) of always only one phase of the DC/AC stage is sufficient to achieve three-phase sinusoidal output currents. The clamping of two phases (denoted as 1/3 PWM) leads to a drastic reduction of the DC/AC stage switching losses, which is further accentuated by a DC link voltage which is lower than for the conventional modulation schemes. This paper details the operating principle of a three-phase buck-boost converter system using 1/3 PWM and outlines an appropriate control system design. Subsequently, the switching losses and the voltage/current stresses on the converter components are analytically derived. There, a more than 66% reduction of the DC/ AC stage switching losses is calculated without any increase of the stress on the remaining converter components. The theoretical considerations are finally verified on a hardware demonstrator, where the proposed modulation strategy is experimentally compared against several conventional modulation techniques and its clear performance advantages are validated.Index Terms-Battery charger, control system design, modulation strategy, variable-speed drives, wide input-output voltage range.

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Section: Operation Principlementioning

confidence: 99%

Analysis of a Synergetically Controlled Two-Stage Three-Phase DC/AC Buck-Boost Converter

et al. 2020

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“…In this context, wide band-gap (WBG) semiconductors, i.e., gallium nitride (GaN) and silicon carbide (SiC), become key technologies to preserve a high power conversion efficiency, even outperforming conventional silicon (Si) based solutions [5]. Additionally, when the supplying DC input voltage varies in a wide range, e.g., when it is provided by the traction battery of an electric vehicle (EV) [6] or by a string of photovoltaic (PV) panels [7], voltage DClink inverters are preceded by a boost-type DC/DC converter input stage [8], which regulates the DC input voltage of the 3-Φ inverter. Hence, the so obtained two-stage converter (including the output filter), i.e., a 3-Φ boost-buck (Bb) voltage source inverter (VSI) system, can operate in a wide DC input voltage range and generate continuous output voltage waveforms, thus fulfilling the requirements of modern DC/AC power converters [1], [8].…”

Section: Introductionmentioning

confidence: 99%

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Guacci¹,

Zhang²,

Tatic³

et al. 2019

CPSS TPEA

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Latest dual-gate (2G) monolithic bidirectional (MB) gallium nitride (GaN) enhancement-mode field effect transistors (e-FETs) enable a performance breakthrough of current DC-link inverters, e.g., in terms of power conversion efficiency, power density, cost and complexity. In fact, a single 2G MB GaN e-FET can replace the two anti-series connected conventional power semiconductors required in this inverter topology, realizing a four-quadrant (AC) switch with bidirectional voltage blocking capability and allowing controlled bidirectional current flow. Furthermore, as shown in this paper in case of three-phase (3-Φ) buck-boost (bB) current source inverter (CSI) systems comprising a DC-link current impressing buck-type DC/DC input stage and a subsequent boost-type 3-Φ current DC-link inverter output stage, a variable DC-link current control strategy, based on aSynergetic Control concept, can be applied to significantly reduce the switching losses occurring in the 3-Φ inverter. This strategy is denominated two-third pulse-width modulation (2/3-PWM), since by properly shaping the DC-link current with the input stage, the desired 3-Φ sinusoidal load phase currents can be generated by switching, in each switching period, only two out of the three phases of the output stage. Based on comprehensive circuit simulations and analytical calculations, a detailed explanation of the developed modulation and control schemes in different operating conditions is provided, and the reduction of losses enabled by 2/3-PWM is confirmed. Next, the seamless transition of the 3-Φ bB CSI system from 2/3-PWM to conventional 3/3-PWM is demonstrated. Finally, a 3.3 kW 3-Φ bB CSI system, applying 2/3-PWM and employing research samples of 2G MB GaN e-FETs in the 3-Φ inverter, is estimated to achieve an efficiency of 98.4% and a power density of 18 kW/dm 3 (295 W/in 3 ) at a switching frequency of 140 kHz. Index Terms-Dual-gate (2G) monolithic bidirectional (MB) gallium nitride enhancement-mode field-effect transistors (e-FETS), three-phase buck-boost current source inverter system, variable DC-link current control. in 2001, all inElectronic Engineering. In 1991, he joined Panasonic Corporation, Osaka, Japan, where he was engaged in the research and development of GaAs HFETs, HBTs, and GaAs MMICs. Since 2003, is involved in the research on GaN-based semiconductor devices. He authored or coauthored more than 60 technical papers in international journals and conference proceedings. He submitted more than 60 patents on semiconductor devices and on their process technologies. His current interest is on GaN-based bidirectional switches and on their applications.

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“…Power electronic converters are being used throughout all low-and medium-voltage applications. They are the key technology for renewable energies, electrical traction systems and future dc grids (1)- (6) . To develop highly efficient and compact dc-dc converters for low-and medium-voltage applications, the advantages of wide-bandgap (WBG) devices are particularly crucial (7) (8) .…”

Section: Introductionmentioning

confidence: 99%

Design Challenges of SiC Devices for Low- and Medium-Voltage DC-DC Converters

et al. 2019

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Silicon carbide (SiC) devices are considered as key enablers for the development of highly efficient and compact dc-dc converters for low-and medium-voltage applications. Besides their high temperature capability and low conduction losses, they provide superior switching characteristics. This paper emphasizes the design challenges of SiC devices in the low-and medium-voltage ranges arising from their fast switching speeds. First, detailed measurement results on the switching characteristics of 1200 V SiC devices and the different leakage inductances are presented. The results are assessed with regard to the switching losses as well as the transient voltage and current overshoots. The impact on the switching behavior as a function of leakage inductances is shown. The leakage inductances also influence the resonance frequency of the power module and dc-dc converters. The determination of the size of the EMI filters is a crucial design aspect. Its significance is demonstrated using an 800 V dc-dc converter with commercially available SiC MOSFETs. In addition, zero-voltage switching is emphasized to reduce the impact of the parasitic elements of the module on the switching behavior. However, the performance of 10 kV SiC MOSFETs in a medium-voltage dc-dc converter shows that a significant amount of commutation energy is required to ensure a successful soft-switching transition.

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Key Components of Modular Propulsion Systems for Next Generation Electric Vehicles

Cited by 108 publications

References 29 publications

Analysis of a Synergetically Controlled Two-Stage Three-Phase DC/AC Buck-Boost Converter

Analysis of a Synergetically Controlled Two-Stage Three-Phase DC/AC Buck-Boost Converter

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Design Challenges of SiC Devices for Low- and Medium-Voltage DC-DC Converters

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