Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Fujishima, Minoru

doi:10.3390/photonics5040050

Cited by 29 publications

(13 citation statements)

References 21 publications

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“…This is the equation shown in Friis' original paper [8]. This equation means that under the condition that the effective antenna area is constant, r increases inversely proportional to 2 [9]. If we substitute the equivalent isotropic radiated power EIRP(= t ⋅ t ) into (5), we get r = EIRP ⋅ r � 4 �…”

Section: Fig 5 the Transmittable Distance By Wireless Communication Fmentioning

confidence: 91%

Overview of sub-terahertz communication and 300GHz CMOS transceivers

Fujishima

2021

IEICE Electron. Express

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A 44 GHz frequency band from 252 GHz to 296 GHz has been identified for communications. This frequency band is part of the 300 GHz band, which is expected to be utilized for ultra-high speed wireless communication toward 6G. In this letter, we will discuss the requirements for ultra-wideband wireless communications in the subterahertz range, including the 300 GHz band, and clarify the necessity of a communication system based on phased arrays. Finally, a 300 GHz CMOS wireless transceiver capable of transmitting data rates of up to 80 Gb/s that can be utilized as an element of this phased array is presented.

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Section: Fig 5 the Transmittable Distance By Wireless Communication Fmentioning

confidence: 91%

Overview of sub-terahertz communication and 300GHz CMOS transceivers

Fujishima

2021

IEICE Electron. Express

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“…Due to availability of wide bandwidth, sub-THz and THz frequency bands offer many promising opportunities for future high speed communication such as beyond 5G (B5G) and 6G [1], [2]. It has been analyzed that indoor range for radio link can be achieved at 300 GHz with decent antenna gain and quite moderate noise figure [3].…”

Section: Introductionmentioning

confidence: 99%

A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers

Singh

Rahkonen

Leinonen

et al. 2021

2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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This paper presents the design of a low noise amplifier (LNA) operating at center frequency 290 GHz in 130 nm SiGe BiCMOS technology with ft/fmax of 300 GHz/450 GHz. The LNA consists of four stages of pseudo-differential cascode topology. Each stage is tuned and matched at different resonant frequency to obtain broadband frequency response around center frequency. This LNA provides 12.9 dB of gain at center frequency 290 GHz and 11.2 dB at 300 GHz. The 3-dB bandwidth is measured to be 23 GHz and simulated noise figure is 16 dB. The LNA draws 68 mA current from 2V supply. It shows the potential of silicon technologies to operate as high as 2/3(fmax) with decent gain and linearity at 300 GHz range. To the authors' knowledge, this LNA achieves, without any gain-boosting technique, the highest gain at 2/3(fmax) in SiGe technology.

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“…As such, these bands are of great potential to be implemented in a range of promising applications in the near future. For example, the sixth-generation wireless mobile communication is expected to enable ultrafast connectivity, targeting at a maximum data rate of 100 Gbit/s around 300 GHz [2]. The implementation of electronic devices and integrated circuits at mmW and sub-mmW frequencies requires suitable and robust packaging to meet the requirement of the signal loss, dimension, and fabrication issues for practical applications [3].…”

Section: Introductionmentioning

confidence: 99%