Kinetic Monte Carlo simulation of site-controlled GaAs/AlGaAs QDs growth on structured substrate

Abstract

A three dimensional kinetic Monte Carlo growth model with structured substrate is developed to simulate site-controlled growth of self-assembled GaAs/AlGaAs quantum dot islands. A variety of different structured substrates are qualitatively studied by kinetic Monte Carlo techniques with different growth temperature. Diffusion behavior of atoms on the structured substrate with square and circle nanohole is obtained by the simulations. Quantum dot islands prefer to nucleate in the nanohole with temperature and slope of the nanohole wall increase. With the converage increase, atoms prefer o nucleate at the edge of the hole other than to nucleate in the hole because of the geometry shape of nanohole in the substrate.