Kinetic Properties and Phase Transitions in Sb2Te3 under Hydrostatic Pressure up to 9 GPa

Abstract

The behaviour is studied of thermo‐e.m.f. and relative electroresistance of single crystal narrow gap semiconductors Sb2Te3 of p‐type under hydrostatic pressure up to 9 GPa and temperatures up to 400 °C. Qualitative changes of kinetic coefficients show the formation of three high pressure phases of Sb2Te3. The formation conditions of these phases and three hypothetical equilibrium P‐T‐diagrams of Sb2Te3 are given and discussed. High pressure phases are narrow gap semiconductors with electronic conductivity.

NegativeP−Tslopes characterize phase change processes: Case of the Ge1Sb2TeKalkan1, Sen2, Aitken3 et al. 2011Phys. Rev. B7120View full textAdd to dashboardCite

“…However, the existence of a high density liquid phase incorporating more closely packed atomic configurations than those occurring in the crystal would mean that ΔV could be negative and, with ΔS positive, the Clapeyron slope of the melting curve would be negative. It is to be noted that a negative P-T slope for melting has also been experimentally observed in the case of Sb 2 Te 3 at pressures below 5 GPa [23].…”

Remarkably Stable Glassy GeS2 Densified at 8.3 GPa: Hidden Polyamorphism, Contrasting Optical Properties, Raman and DFT Studies, and Advanced Applications

“…Pressure measurements were performed using a Manganin sensor (2 cm of manganin wire with a diameter of 0.05 mm with 4 electrodes) calibrated on the bismuth transitions (2.54 and 7.7 GPa). The electrical resistance of a Manganin sensor changes almost linearly with increasing pressure up to 9 GPa, if the pressure of the surrounding liquid remains hydrostatic. , The pressure reproducibility in the experiments was 3 MPa. Further details on the high-pressure experiments can be found elsewhere. , …”

Insights into the structure of the stable and metastable(GeTe)m(Sb2TeSilva1, Walsh2, Lee3 2008Phys. Rev. B18491430View full textAdd to dashboardCite

“…1͒. 15,43,44 We observe that a single building block has a RS-type structure, in which the Te atoms within the block have a stacking sequence like in the GeTe structure ͑ABC͒, however, in the hexagonal unit cell composed of three building blocks the Te atoms have a stacking sequence like ABCBCACAB along of the c axis ͑see Fig. 2͒.…”