The thermoelectric tensor component S11 and the relative electrical resistance along the binary axis of Bi2Te3 single crystals of p‐ and n‐type are measured under hydrostatic pressure up to 9 GaP and temperatures from 20 to 300 °C. A P‐T phase diagram of bismuth telluride is proposed, which is different from diagram, obtained under nonhydrostatic conditions.

The thermoelectric tensor component S11 and the relative electrical resistance along the binary axis of Sb2Te3 single crystals are measured at room temperature under hydrostatic pressure up to 9 GPa both, during the up stroke and during the down stroke of pressure cycle. Reversible first order phase transition and anomalous behavior of thermo‐ e.m.f. near to this transition in antimony telluride are found.

Durch Gefüge‐ und thermische Analyse wird das Zustandsdiagramm des Systems GeTe‐ In2Te3 ermittelt.

The behaviour is studied of thermo‐e.m.f. and relative electroresistance of single crystal narrow gap semiconductors Sb2Te3 of p‐type under hydrostatic pressure up to 9 GPa and temperatures up to 400 °C. Qualitative changes of kinetic coefficients show the formation of three high pressure phases of Sb2Te3. The formation conditions of these phases and three hypothetical equilibrium P‐T‐diagrams of Sb2Te3 are given and discussed. High pressure phases are narrow gap semiconductors with electronic conductivity.

The electrical resistance of GeTe polycrystalline samples with hole concentration 3.9 × 1020 cm−3 has been measured at hydrostatic pressure up to 9.3 GPa and at temperature up to 600°C. The PT phase diagram of GeTe is presented based on the resistance peculiarities observed at the phase transitions in this material. The new γ′‐phase is found to be stable at high pressure. Equilibrium lines between rhombohedral α‐phase, cubic β‐phase, and new γ′‐phase intersect in the triple point (3.5 GPa; 300°C). The pressure coefficient of the ferroelectric α → β phase transition temperature is dTcdP = −31.6 K/GPa. The influence of shear stresses on the phase transitions in GeTe is discussed.