Thermoelectric properties and phase transitions in Bi2Te3 under hydrostatic pressure up to 9 GPa and temperature up to 300 °C

Khvostantsev, L. G.; Orlov, A. Yu.; Abrikosov, N. Kh.; Svechnikova, T. E.; Chizhevskaya, S. N.

doi:10.1002/pssa.2210710104

Cited by 31 publications

(38 citation statements)

References 3 publications

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“…The results of both types of measurements are in good accordance. Investigations of S(P) previously made by using the described technique for a wide range of semiconductors showed good agreement with the data of certain hydrostatic pressure experiments up to 10 GPa [20].…”

Section: Experimental Techniquementioning

confidence: 53%

Semiconductor–metal transitions in lead chalcogenides at high pressure

Ovsyannikov

Shchennikov

Popova

et al. 2003

Physica Status Solidi (b)

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PACS 71.30.+h, 72.20.MyThe results of thermoelectric power (S) measurements of the lead chalcogenides PbS, PbSe, and PbTe at the initial NaCl-phase, as high-pressure semiconductors (above 2 -6 GPa), and at metal phases (above 10 -15 GPa) are presented. Phase transitions are discussed in terms of the model of Peierls distortion of lattice. IntroductionThe lead chalcogenides PbS, PbSe, and PbTe are narrow gap semiconductors with forbidden energy gaps of 0.286 eV, 0.16 eV, and 0.19 eV, respectively [1−3]. At high pressure P ∼ 2 −6 GPa these compounds undergo a phase transformation from the NaCl-to the GeS-type lattice [4−10] with about a two-fold increase of the lattice parameter a [5]. The resistivity of PbX (X is S, Se, or Te) compounds abruptly rises at the phase transition [4−8] similar to mercury chalcogenides, but contrary to most of other semiconductors. At pressures above ∼15 GPa further structural phase transitions were observed into the CsCl-type cubic lattice [9,10]. The jumps of the electrical resistance R during the first transitions [4−8] and the drop of R at the second one allows to suggest that structural changes are accomplished by electronic "semiconductor-metal" phase transitions [6,7,10]. Thermoelectric properties of new phases, which are capable to clarify the electronic structure [11], are unknown. The aim of the present work was the investigation of the thermoelectric power S of high pressure phases of PbX compounds.

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Section: Experimental Techniquementioning

confidence: 53%

Semiconductor–metal transitions in lead chalcogenides at high pressure

Ovsyannikov

Shchennikov

Popova

et al. 2003

Physica Status Solidi (b)

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“…[3][4][5][6] Nowadays, the TE parameters of Bi 2 Te 3 are optimized by "technological factors" such as ͑i͒ doping and ion substitution ͓CsBi 4 Te 6 , 5 ͑Bi, Sb͒ 2 ͑Te, Se, S͒ 3 ͔, 6-8 ͑ii͒ variation in mesostructure ͑nanostructures, superlattices, quantum dots, and wires͒, 3,[9][10][11][12][13][14][15] and ͑iii͒ variation in synthesis conditions. 20,21 At ambient conditions Bi 2 Te 3 adopts a rhombohedral lattice of the R3m space group. 19 Effects of pressure and magnetic field on the TE properties of Bi 2 Te 3 were investigated in only a few works.…”

Section: Introductionmentioning

confidence: 99%

Giant improvement of thermoelectric power factor of Bi2Te3 under pressure

Ovsyannikov

Shchennikov

Vorontsov

et al. 2008

Journal of Applied Physics

154

104

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The pressure ͑P͒ dependencies of both the thermopower ͑Seebeck effect͒ S and the electrical resistance ͑R͒ for p-type single crystals of Bi 2 Te 3 and indium-doped bismuth telluride ͑In x Bi 2−x Te 3 , 0.04Յ x Յ 0.10͒ are reported on a pressure range of 0-8.5 GPa. The thermoelectric power factor ͑efficiency͒ ͑ae = S 2 / R͒ exhibits two maxima: the first one near ϳ1 GPa and the second near ϳ2.5-4.5 GPa. These features evidence a giant increase in the power factor by a factor of ϳ10. Possible values of the dimensionless figure of merit under pressure are also estimated. The maxima are explained in terms of pressure-driven changes in an electron structure. The second feature may be also addressed to an intermediate high-pressure phase detected in x-ray diffraction studies.

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“…, extraordinary thermoelectric materials at ambient temperature [8] and the possible topological superconductors [9] with surface states consisting of a single Dirac cone at the . All of these have made A V 2 B VI 3 compounds as the subject of intensive investigation both in fundamental and applied research.…”

Section: Introductionmentioning

confidence: 99%