Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects

Revesz, A. G.; Evans, Russ

doi:10.1016/0022-3697(69)90010-9

Cited by 112 publications

(92 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…More recent reports are in ref [3][4][5]. These authors all agree that there are two different time dependencies during the oxidation of silicon by dry oxygen: initially there is a linear region; then the rate becomes parabolic.…”

Section: Oxidation Of Silicon By Dry Oxygenmentioning

confidence: 92%

Oxidation of silicon by water and oxygen and diffusion in fused silica

Doremus¹

1976

J. Phys. Chem.

114

View full text Add to dashboard Cite

Publication costs assisted by Rensselaer Polytechnic InstituteA model for the oxidation of silicon by diffusion of molecular oxygen or water through the silicon oxide layer is compared to experimentally measured oxidation rates, using diffusion coefficients and solubilities measured for fused silica. Good agreement between calculated and measured rates results in three respects: the absolute rate, and its pressure and temperature dependence. The model of molecular diffusion therefore provides the most satisfactory explanation for diffusion-controlled oxidation of silicon. IntroductionDiffusion of components through a coherent film of oxide often controls the rate of oxidation of metals and semiconductors; then the square of the oxide thickness is proportional to time (parabolic rate). Diffusion of metallic or oxygen ions is usually considered to control the oxidation rate; however, diffusion of the oxidizing species themselves (water or oxygen molecules) through the oxide can control the rate of oxidation if such molecular diffusion is rapid enough.In this paper evidence is presented that the diffusion-controlled oxidation of silicon by water or oxygen results from molecular diffusion of these gases through the silicon dioxide layer. First experimental results on the oxidation of silicon are briefly reviewed, and then molecular diffusion of gases in fused silica is discussed. X-ray diffraction experiments have shown that the oxide layer on silicon is amorphous and similar to fused si1ica;l the density of the layer is also about that of fused silica, so the film is probably quite similar to fused silica. Models for the oxidation of silicon by molecular diffusion are presented and compared to oxidation rates and diffusion coefficients of water and oxygen in fused silica. Good agreement between the models, oxidation experiments, and these diffusion coefficients is found in three respects: the pressure dependence, the absolute value of the oxidation rate, and the temperature dependence. Thus molecular diffusion of water and oxygen in the oxide layer provide the most satisfactory explanation for diffusion-controlled oxidation of silicon.

show abstract

Section: Oxidation Of Silicon By Dry Oxygenmentioning

confidence: 92%

Oxidation of silicon by water and oxygen and diffusion in fused silica

Doremus¹

1976

J. Phys. Chem.

114

View full text Add to dashboard Cite

show abstract

“…(28) N : 1.36 X 1017 H~ [8] for H = ,-,130 cm -1. This independent calibration greatly increases the confidence in the data obtained by multiple reflection infrared techniques.…”

Section: There) and ~ Is The Absorbance [Log (Io/i)] This Valuementioning

confidence: 99%

The Role of Hydrogen in SiO2 Films on Silicon

Revesz¹

1979

J. Electrochem. Soc.

177

View full text Add to dashboard Cite

This review discusses within a unified framework various phenomena occurring in thermally grown SiO2 films on silicon with hydrogen as the most important contaminant or additive. The possible sources of hydrogen are (i) H20 in the oxidizing ambient, deliberately i~ntroduced or resulting from permeation through hot furnace tubes, (ii) hydrogen in the room ambient oxide film on silicon, and (iii) deliberate or unintentional H2 or H20 in the ambient of postoxidation heat-treatments. The "critical oxide thickness," which separates the linear oxidation regime from the parabolic one, is a very sensitive indicator of H20 present in the oxidizing ambient. There is plenty of evidence, both direct and indirect, of hydrogen in SiO2 films. In particular, infrared spectroscopy shows that OH and Sill groups are present whose concentration and distribution depend strongly on preparation conditions. These groups can be H-bonded to an oxygen; this feature and the presence of Sill distinguishes SiO2 films from fused SiO2 which is another form of noncrystalline SIO2. The H-bonded OH groups in grown SiO2 films may be preferentially aligned along structural channels and responsible for various transport processes characterized by ~.,0.3 eV activation energy. Hydrogen greatly affects the properties of the Si/SiO2 interface, particularly its behavior under negative bias stress and irradiation. In fact, practically all properties of Si/SiO2 interface structures depend so strongly on hydrogen that its proper control and the understanding of its complicated role are probably the most important problems associated with these structures. This is particularly true for silicon-based chemical sensors whose operation is basically determined by hydrogen in the SiO2 film. Various aspects of the hydrogen in Si/SiO2 interface structures are similar to the role of hydrogen in SisN4 and SiH~ polymer films as well as in passivating films on metals.It has been known for many years that hydrogen, often in the form of water, greatly affects the oxidation of silicon and the interface properties of Si/SiO2 structures. Various observations on negative bias instability, irradiation behavior, and dielectric properties have corroborated the evidence that hydrogen plays a major role in Si/SiO2 interface structures. Also, it is very likely that hydrogen essentially determines the operation of some devices, particularly solidstate chemical sensors involving the Si/SiO2 interface, such as ion-sensitive field-effect transistors (ISFET).This paper discusses within a unified framework various phenomena occurring in SiO2 films on silicon, with hydrogen as the most important contaminant or additive. Thermally grown SiO2 films will be emphasized since thermal rather than anodic oxidation is the technologically important process. It will be shown that practically all properties of Si/SiO2 interface structures depend very strongly on hydrogen and that the precise control of hydrogen in the various processing steps is probably the most important problem of MOS technology. ...

show abstract

“…Na +can diffuse quite rapidly in SiO and with its prodigous natural .2 abundance is a major Si-SiO interfacial impurity giving rise to large amounts of 2 + positive charge at the Si surface. In terms of oxidation kinetics, Na has been found to enhance the Si oxidation rate (67). The details of the kinetics are not well known.…”

mentioning

confidence: 99%

Models for the oxidation of silicon

Lewis

Irene

1986

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Since the 1960’s many adaptations to the linear parabolic model for silicon oxidation have been proposed. For the purposes of process engineering, curve fitting procedures which are sometimes devoid of physical content but numerically precise are employed. However, a truly unified physical model which is in quantitative accord with all known facts is still lacking. In this review we will discuss the ‘‘facts’’ and newer models.

show abstract

Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects

Cited by 112 publications

References 26 publications

Oxidation of silicon by water and oxygen and diffusion in fused silica

Oxidation of silicon by water and oxygen and diffusion in fused silica

The Role of Hydrogen in SiO2 Films on Silicon

Models for the oxidation of silicon

Contact Info

Product

Resources

About