Kinetics of boron reactivation in doped silicon from Hall effect and spreading resistance techniques

Lilak, A. D.; Law, Mark E.; Radic, Ljubo; Jones, K. S.; Clark, Mark

doi:10.1063/1.1508438

Cited by 21 publications

(9 citation statements)

References 8 publications

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“…Actually, the electrical measurements for quantifying the BIC dissolution can be affected by scattering effects by B clusters on the mobility of charge carriers, which alters the determination of the active B amount. 6,[93][94][95][96] To properly measure the BIC dissolution energetics, we used the diffusion criterion together with a proper rate equation model able to fit the chemical profiles, to simulate the B diffusion and to extract the clustered B amount produced by a controlled I supersaturation into MBE grown Si samples containing various B doped regions. 97 It was clearly shown that B clusters dissolve following two distinct paths with different energy barriers (3.6 or 4.8 eV) and rates, the slowest one (with the 4.8 eV barrier) being present only for B concentration above the solid solubility.…”

Section: B-i Clusters Formation and Dissolutionmentioning

confidence: 99%

Mechanisms of boron diffusion in silicon and germanium

Mirabella

Salvador

Napolitani

et al. 2013

Journal of Applied Physics

104

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B migration in Si and Ge matrices raised a vast attention because of its inﬂuence on the production of conﬁned, highly p-doped regions, as required by the miniaturization trend. In this scenario, the diffusion of B atoms can take place under severe conditions, often concomitant, such as very large concentration gradients, non-equilibrium point defect density, amorphous-crystalline transition, extrinsic doping level, co-doping, B clusters formation and dissolution, ultra-short high-temperature annealing. In this paper, we review a large amount of experimental work and present our current understanding of the B diffusion mechanism, disentangling concomitant effects and describing the underlying physics. Whatever the matrix, B migration in amorphous (a-) or crystalline (c-) Si, or c-Ge is revealed to be an indirect process, activated by point defects of the hosting medium. In a-Si in the 450-650 C range, B diffusivity is 5 orders of magnitude higher than in c-Si, with a transient longer than the typical amorphous relaxation time. A quick B precipitation is also evidenced for concentrations larger than 2 x10^20 B/cm3. B migration in a-Si occurs with the creation of a metastable mobile B, jumping between adjacent sites, stimulated by dangling bonds of a-Si whose density is enhanced by B itself (larger B density causes higher B diffusivity). Similar activation energies for migration of B atoms (3.0 eV) and of dangling bonds (2.6 eV) have been extracted. In c-Si, B diffusion is largely affected by the Fermi level position, occurring through the interaction between the negatively charged substitutional B and a self-interstitial (I) in the neutral or doubly positively charged state, if under intrinsic or extrinsic (p-type doping) conditions, respectively. After charge exchanges, the migrating, uncharged BI pair is formed. Under high n-type doping conditions, B diffusion occurs also through the negatively charged BI pair, even if the migration is depressed by Coulomb pairing with n-type dopants. The interplay between B clustering and migration is also modeled, since B diffusion is greatly affected by precipitation. Small (below 1 nm) and relatively large (5-10 nm in size) BI clusters have been identiﬁed with different energy barriers for thermal dissolution (3.6 or 4.8 eV, respectively). In c-Ge, B motion is by far less evident than in c-Si, even if the migration mechanism is revealed to be similarly assisted by Is. If Is density is increased well above the equilibrium (as during ion irradiation), B diffusion occurs up to quite large extents and also at relatively low temperatures, disclosing the underlying mechanism. The lower B diffusivity and the larger activation barrier (4.65 eV, rather than 3.45 eV in c-Si) can be explained by the intrinsic shortage of Is in Ge and by their large formation energy. B diffusion can be strongly enhanced with a proper point defect engineering, as achieved with embedded GeO2 nanoclusters, causing at 650 °C a large Is supersaturation. These aspects of B diffusion are presented and discus...

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Section: B-i Clusters Formation and Dissolutionmentioning

confidence: 99%

Mechanisms of boron diffusion in silicon and germanium

Mirabella

Salvador

Napolitani

et al. 2013

Journal of Applied Physics

104

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“…The formation of B clusters in highly B-doped Si is a well-known phenomenon. [24][25][26] The characteristics of the B clusters formed by B implantation are as follows. It is known from resistivity and SIMS measurements that B clusters are formed in the case of a doping level of approximately 10 19 cm −3 or more.…”

Section: A Origin Of B-h Complexesmentioning

confidence: 99%

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

et al. 2005

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The formation of hydrogen ͑H͒ related complexes and their effect on boron ͑B͒ dopant were investigated in B-ion implanted and annealed silicon ͑Si͒ substrates treated with a high concentration of H. Isotope shifts by replacement of 10 B with 11 B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

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“…It is important to notice that for these experiments the concentration of boron in the as-implanted sample is notably higher than the boron solubility limit in monocrystalline Si (~ 4 × 10 17 cm -3 at 600 °C [12]). Thus the fact that a part of the B atoms did not diffuse can be explained considering that during the annealing the immobile atoms formed boron-interstitial-clusters (BICs), whose properties have been the object of theoretical [13][14][15] and experimental [16][17][18][19][20] studies. Fig.…”

Section: E+21 1e+20 1e+19mentioning

confidence: 99%

Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon

Simola¹,

Mangelinck²,

Portavoce³

et al. 2006

AIP Conference Proceedings

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The redistribution of boron has been studied during solid phase crystallization (SPC) of a homogeneous phosphorus-doped amorphous silicon layer deposited by low pressure chemical vapor deposition, for different thermal annealing. We show that for the lower temperature annealing (T = 586 °C, 1h) boron diffuses without changing the P profile, while for the higher temperature annealing (T = 800 °C, 3h), the initially homogeneous P profile is modified, showing two concentration peaks.

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Kinetics of boron reactivation in doped silicon from Hall effect and spreading resistance techniques

Cited by 21 publications

References 8 publications

Mechanisms of boron diffusion in silicon and germanium

Mechanisms of boron diffusion in silicon and germanium

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon

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