A new type of magnetic domain wall in nearly compensated Gasubstituted YIG Laser annealing induced changes in Ga-substituted EuYIG epitaxial bubble films were studied using FMR, bubble statics, SQUID magnetometry, and dynamic bubble translation experiments employing high speed photography. Comparing annealed to as-grown films, domain wall mobility and saturation velocity were observed to increase up to 50% while static coercivity He< was reduced by as much as one-third. Both an increase in exchange A and a decrease in damping a appear to contribute to enhanced mobility; we attribute the variations of both A and a to the interchange of Ga and Fe between crystal lattice sites brought about by laser annealing. The mechanism by which H" was reduced is less clear, but may follow from the reduction of stress during annealing.