Kinetics of Copper CVD Using Solution Delivery of Cu(hfac)[sub 2] and Isopropanol

Abstract

We have measured the growth kinetics and film properties for copper chemical vapor deposition ͑CVD͒ using Cu͑hfac͒ 2 dissolved in isopropanol as the precursor delivery method. Growth rates are similar to those reported using reactant evaporation as the delivery method, despite operating with a much lower partial pressure of Cu͑hfac͒ 2 in the reactor. The reaction kinetics are first-order with respect to precursor partial pressure and zero-order with respect to isopropanol. Film morphology suggests that growth occurs via three-dimensional cluster formation ͑i.e., a Volmer-Weber process͒. Resistivity deviates above the bulk value for films thinner than 0.1 m and may be attributed mainly to electron scattering from surface roughness. We propose a minimal parameter series reaction mechanism that can account for the present kinetic behavior, as well as previous results using higher precursor partial pressure.

Supercritical Fluid Chemical Deposition as an Alternative Process to CVD for the Surface Modification of Materials

“…Apart from the improvement they can provide for CVD in term of delivery, the coordination of alcohols to precursors can dramatically change the deposition rate, both kinetically and thermodynamically. Alcohol can act as a direct reducing agent to form copper metal, while being oxidized to the corresponding carbonyl compounds,60 as shown in Reaction 1. …”

Synthesis, spectral and electrochemical studies of Cu(II) and Ni(II) complexes with new N2O2 ligands: A new precursor capable of depositing copper nanoparticles using thermal reduction

“…Copper-based metallization has been introduced into leadingedge microelectronic industries because of its promising physical properties, such as lower resistivity, improved electromigration resistance, and increased resistance to stress induced formation of voids caused by a higher melting point for copper [10][11][12][13]. Copper organometallic compounds have been evaluated as CVD precursors [14][15][16][17][18][19][20][21][22][23]. The copper complex with perfluorinated ligands is the most attractive precursors since they decompose giving highly pure copper films at relatively low deposition temperatures.…”