Kinetics of copper drift in PECVD dielectrics

Loke, Alvin L. S.; Ryu, Chunghyun; Yue, Chuang; Cho, J.S.H.; Wong, S.S.

doi:10.1109/55.545766

Cited by 104 publications

(62 citation statements)

References 5 publications

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“…In order to investigate the thermal stability of HfO film with Cu electrode, an effective electric field of MV/cm at elevated temperatures ranging from 100 C to 200 C was applied to the gate stacks for BTS testing. is observed for the Cu-SiO -Si capacitor, indicating that positively bulk charges (i.e., Cu ions) are introduced into the dielectric [15]. In contrast, only negligible shift is found for the Al-SiO -Si capacitors after BTS test.…”

Section: Introductionmentioning

confidence: 89%

<tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode

Perng

Chien

Chen

et al. 2004

IEEE Electron Device Lett.

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Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO 2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO 2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown ( BD ) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO 2 dielectric, Cu in contact with HfO 2 seems to be very stable. The HfO 2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO 2 with its considerably high density of 9.68 g/cm 3 is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.

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Section: Introductionmentioning

confidence: 89%

<tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode

Perng

Chien

Chen

et al. 2004

IEEE Electron Device Lett.

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“…By applying a negative TE bias, the Ag filaments within the stacked solid electrolytes are dissolved and brought back to the silver TE. Because the field-induced mobility and diffusion coefficient of Ag ions in thermally grown SiO 2 film are lower than those in chemically deposited SiO x layer [23]- [27], the Ag filament is dissolved from the SiO x /SiO 2 interface first, as shown in the soft breakdown phenomenon of reset 1 process in Fig. 3(a).…”

Section: B Multilevel Resistive Switching Mechanisms Of Stacked-solimentioning

confidence: 99%

Thickness-Optimized Multilevel Resistive Switching of Silver Programmable Metallization Cells With Stacked SiO<sub><italic>x</italic></sub>/SiO<sub>2</sub> Solid Electrolytes

Wang

Chiu

Chen

2015

IEEE Trans. Electron Devices

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Multilevel resistive switching (RS) characteristics of silver programmable metallization cells (Ag-PMCs) with stacked SiO x /SiO 2 solid electrolytes have been investigated. Combined with conventional high/low resistance states and additional two middle resistance states (MRS1/MRS2), a multilevel cell operation of stacked-solid-electrolyte Ag-PMCs is achieved and optimized by the film thickness. Furthermore, the RS mechanism at middle resistance states has been proposed to be locally discontinuous Ag conductive filament (Ag-CF) within the stacked solid electrolytes by examining the carrier transportation and two-frequency calibrated capacitance. The stacked silicon oxide layers can prevent the Ag-CF from regeneration during the multilevel retention test, contributing to the superior retention properties to more than 10 4 s at 125°C. In addition, a sequentially multilevel cycling test of more than 10 3 times with a resistance ratio of two orders of magnitude between each resistance state is realized by the stacked-solid-electrolyte Ag-PMCs, suitable for future high-density nonvolatile memory applications.Index Terms-Dissipation, high-angle annular dark field (HAADF), multilevel resistive switching (RS), programmable metallization cell (PMC), silver (Ag), stacked solid electrolytes.

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“…Silicon nitride (SiN) is the currently used material because it has been used as a masking and passivating layer for a long time against diffusion of metal ions and moisture absorption [5]. The structural properties and the dielectric constant of a-SiC:H films varies from 2.5 to 7.5 as a function of carbon content and network arrangement [6][7][8][9]. As a result there have been many successful attempts of employing a-SiC:H as a low dielectric barrier layer [10].…”

Section: Introductionmentioning

confidence: 99%