Kinetics of crystals growth under electron-beam   crystallization of amorphous films of hafnium dioxide

Bagmut, A. G.; Багмут, И. А.

doi:10.15407/fm25.03.525

Cited by 5 publications

(6 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reported values for D Ã range from 143 nm to 294 nm (Ref. 24) and are comparable to the average grain sizes reported in this work here. As the transition to the monoclinic phase involves unit-cell shearing (that, notably, is mechanically suppressed when using TiN capping layers 7 ) we believe that this phase transition in MFIS structures is shifted to higher temperatures, with some larger grains already being FIG.…”

supporting

confidence: 89%

“…rendered monoclinic. In addition to the two-stage process, the nucleation of the monoclinic phase has been demonstrated experimentally as well 24 and may also explain the small monoclinic grains present in all samples here. The strong differences in the HSO microstructure for MFM and MFIS samples (as summarized in Table I) are further underlined when analyzing their crystallographic texture.…”

supporting

confidence: 58%

“…A possible explanation for this behavior is the phase transformation of amorphous HfO 2 reported by Bagmut, 24 which proceeds in two steps: first, orthorhombic grains grow up to a critical grain diameter D Ã above which they transform into the monoclinic phase. The reported values for D Ã range from 143 nm to 294 nm (Ref.…”

mentioning

confidence: 99%

“…22 In addition, island (IPC) and dendrite (DPC) polymorphic growth were reported for zirconium and hafnium oxides, with IPC or DPC nucleating in the cubic/tetragonal or orthorhombic/monoclinic phase, respectively. [22][23][24] When comparing samples that have been annealed at different temperatures, the average grain size remains constant and no clear trend with temperature is observed. This is quite remarkable, as crystal growth generally is very temperature sensitive due to on-surface diffusion.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide

Lederer

Reck

Mertens

et al. 2021

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

supporting

confidence: 89%

supporting

confidence: 58%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide

Lederer

Reck

Mertens

et al. 2021

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Previously, the electron beam crystallization of an amorphous stoichiometric HfO 2 film and study of its structure were carried out by Bagmut [19]. In this work, it was found that the monoclinic α-HfO 2 phase microcrystals were formed and grown under the action of an electron beam in the amorphous HfO 2 film.…”

Section: Discussionmentioning

confidence: 95%

Comparative study of electron-beam crystallization of amorphous hafnium oxides HfO2 and HfOx (x = 1.82)

et al. 2020

View full text Add to dashboard Cite

The phase transformations of stoichiometric HfO 2 and non-stoichiometric HfO x oxides grown by ion-beam sputteringdeposition during their electron beam crystallization were investigated. It was found that the sequences of crystalline phase formations in stoichiometric and non-stoichiometric oxides are significantly different. An amorphous HfO 2 film crystallizes first to form monoclinic α-HfO 2 phase nanocrystals and then tetragonal β-HfO 2 phase nanocrystals. In nonstoichiometric HfO x oxides (x = 1.82), in contrast to HfO 2 oxides, hexagonal α-Hf phase metal clusters were initially present. During the crystallization process, the metallic α-Hf phase growth was observed first with the simultaneous appearance of the monoclinic α-HfO 2 phase. Then the orthorhombic-I γ-HfO 2 phase appeared, while the α-Hf phase growth ceased. The composition of the investigated non-stoichiometric HfO x oxides was chosen to be the same as in the dielectric layer of resistive memory cells (ReRAM). The crystallization of oxides was carried out in a local region, the sizes of which are comparable with the size of the ReRAM filament. This made it possible to partially project the crystallization results onto the forming and switching processes in ReRAM cells.

show abstract

Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide

Lederer

Bagul

Lehninger

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

The ferroelectric properties of hafnium oxide films are strongly influenced by the crystallization process due to the interaction of thermodynamics, kinetics, and mechanical stress. In this work, the influence of annealing temperature on the crystallographic properties and microstructure of Si-doped hafnium oxide thin films as well as their ferroelectric properties are investigated by X-ray diffraction, transmission Kikuchi diffraction, and electrical characterization. The findings reveal the emergence of a [100] and [110] out-of-plane texture for metal−ferroelectric− metal (MFM) and metal−ferroelectric−insulator−semiconductor (MFIS) capacitor structures with increasing annealing temperature, respectively. In combination with observed stress relaxation at higher temperatures and the evolution of the wake-up behavior, insights into the crystallization process and the influence of the interplay of microstructure and stress on the ferroelectric properties of hafnium oxide thin films are given.

show abstract

Kinetics of crystals growth under electron-beam crystallization of amorphous films of hafnium dioxide

Cited by 5 publications

References 15 publications

Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide

Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide

Comparative study of electron-beam crystallization of amorphous hafnium oxides HfO2 and HfOx (x = 1.82)

Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide

Contact Info

Product

Resources

About