Kinetics of diffusion growth of silicides in silicon–thin-metal-film systems

Barg, A. I.; Bokstein, Boris S.; Klinger, L.

doi:10.1063/1.351746

Cited by 10 publications

(4 citation statements)

References 34 publications

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“…This means that the silicide formation is in competition with the oxidation process, and could lead to different kinetics. It may also be that the stress or morphological effects [6] cause the observed t 1/3 kinetics. If the log of the growth rate, R, is plotted against the inverse temperature, T, according to…”

Section: Resultsmentioning

confidence: 99%

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The Influence of Stress on TiSi<sub>2</sub> Phase Formation

Nkosi

Theron²,

Ndwandwe³

et al. 2003

DDF

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Thermal stress can be engineered in a thin film system by depositing a film with a different thermal expansion to that of the substrate on the back of the substrate. In this work the effect of stress on TiSi 2 formation was studied by depositing Si 3 N 4 or SiO 2 layers of different thickness on the backside of Si(100) wafers. One set of samples had 400 nm SiO 2 on the back of the wafer and the other sets had 200 nm and 400 nm Si 3 N 4 , respectively. Rutherford Backscattering Spectrometry (RBS) and X-ray diffraction (XRD) measurements showed that the reaction was faster in samples with Si 3 N 4 on the back of the wafer. The TiSi 2 formation kinetics was found to be linear with the cube root of the annealing time. The formation kinetics had an Arrhenius dependence on temperature. The apparent activation energy for all three types of samples was the same within experimental error. The growth rate of TiSi 2 on wafers with Si 3 N 4 layers on the back was between 3 (600°C) and 5 times (490°C) faster than that on wafers with SiO 2 deposited on the backside.

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Section: Resultsmentioning

confidence: 99%

“…If the kinetics is reaction-controlled x versus t will give a straight line graph (linear kinetics). When the morphology of the growing silicide is considered, a simultaneous change in width and height of silicide grains will result in growth proportional to t 1/3 [6].…”

Section: Formation Kineticsmentioning

confidence: 99%

The Influence of Stress on TiSi<sub>2</sub> Phase Formation

Nkosi

Theron²,

Ndwandwe³

et al. 2003

DDF

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“…Bark et al [10] derived a similar formula starting from Fick's law (2), which does not consider, however, the existence of a chemical driving force and they obtained for the GB diffusion coefficient the following expression:…”

Section: Theoretical Modelsmentioning

confidence: 99%

Grain Boundary Reactive Diffusion in Ni2Si Thin Films

Lösch

Acchar²

1999

phys. stat. sol. (a)

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“…In this context, some works dealing with the growth process of silicides (WSi 2 and W 5 Si 3 ) in W metal films have been published in the last years [5][6][7]. The study of silicides formation processes in W filaments has also attracted much attention from the scientific community in the context of the hot-wire chemical vapour deposition (HWCVD) of silicon (Si) related materials [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Real-time monitoring of the silicidation process of tungsten filaments at high temperature used as catalysers for silane decomposition

Nos

Frigeri

Bertomeu

2014

Materials Chemistry and Physics

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The scope of this work is the systematic study of the silicidation process affecting tungsten filaments at high temperature (1900ºC) used for silane decomposition in the hot-wire chemical vapour deposition technique (HWCVD). The correlation between the electrical resistance evolution of the filaments, R fil (t), and the different stages of the their silicidation process is exposed. Said stages correspond to: the rapid formation of two WSi 2 fronts at the cold ends of the filaments and their further propagation towards the middle of the filaments; and, regarding the hot central portion of the filaments: a initial stage of silicon dissolution into the tungsten bulk, with a random duration for asmanufactured filaments, followed by the inhomogeneous nucleation of W 5 Si 3 (which is later replaced by WSi 2 ) and its further growth towards the filaments core. An electrical model is used to obtain real-time information about the current status of the filaments silicidation process by simply monitoring their R fil (t) evolution during the HWCVD process. It is shown that implementing an annealing pre-treatment to the filaments leads to a clearly repetitive trend in the monitored R fil (t) signatures. The influence of hydrogen dilution of silane on the filaments silicidation process is also discussed.

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Kinetics of diffusion growth of silicides in silicon–thin-metal-film systems

Cited by 10 publications

References 34 publications

The Influence of Stress on TiSi<sub>2</sub> Phase Formation

The Influence of Stress on TiSi<sub>2</sub> Phase Formation

Grain Boundary Reactive Diffusion in Ni2Si Thin Films

Real-time monitoring of the silicidation process of tungsten filaments at high temperature used as catalysers for silane decomposition

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