Kinetics of laser-induced liquid metal etching of a-Si films

Abstract

It ist demonstrated that spatially modulated laser pulse‐induced melting of semiconductor/metal films can be used to generate micropatterns in semiconductors. The kinetics of the phase transitions are traced by time‐resolved electron microscopy down to specimen areas of 0.5 μm Ø. In the case of a‐Si/Al films crystallization of a‐Si, formation of Al‐silicides and transport of material by liquid motion are observed. These processes proceeded with velocities of some 10 m/s.

Metal Oxide Film for Growing Vertically Aligned Single-Walled Carbon Nanotubes

“…In previous investigations of laser-induced fast phase transitions in thin semiconductor films, a commercial transmission electron microscope (TEM) was used with a scintillator/photomultiplier combination to trace the kinetics of the phase transition (Bostanjoglo et a1 1985, Bostanjoglo andEndruschat 1985). Since the integral intensity of the TEM image is measured, multistage transitions, in particular, may not be interpreted unambiguously.…”