Kinetics of laser-induced solid phase epitaxy in amorphous silicon films

Kokorowski, S. A.; Olson, G. L.; Hess, L. D.

doi:10.1063/1.330561

Cited by 77 publications

(16 citation statements)

References 12 publications

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“…The solid-phase epitaxial growth rate is 3.5Å/s, which agrees with reported values of 1 -5 Å/s [10,11]. The solid-phase epitaxial growth rate is 3.5Å/s, which agrees with reported values of 1 -5 Å/s [10,11].…”

Section: Discussionsupporting

confidence: 90%

Real Time Monitoring of the Crystallization of Hydrogenated Amorphous Silicon

et al. 2005

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In-situ real-time optical reflectance spectroscopy is applied to investigate structural changes as hydrogenated amorphous silicon (a-Si:H) loses H and crystallizes at elevated temperature. The interference fringe spectrum (cutoff energy and amplitude) mainly characterize changes in the bulk, while the the crystal Si (c-Si) direct-transition ultra-violet reflectance signatures reveal the presence of any crystalline phase at the surface. Effusion of atomic hydrogen is monitored by a decrease of the interference fringe cutoff energy and is thermally activated with about 1.7 eV. In a-Si:H on glass, optical reflectance spectra are consistent with 2.8 eV activated homogeneous nucleation and growth of a small grain (~100 nm) polycrystalline phase. In contrast, a-Si:H on c-Si crystallizes by solid phase epitaxy with very different spectral kinetics. Our measurements reveal the temperature-time window for thermal crystallization of a-Si:H for photovoltaic device applications, and highlight the versatility of the in-situ spectral reflectance monitoring.

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Section: Discussionsupporting

confidence: 90%

Real Time Monitoring of the Crystallization of Hydrogenated Amorphous Silicon

et al. 2005

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“…The metastable solubility is the competition between the diffusive velocity of the impurity in the amorphous phase and the velocity of solid phase epitaxy, both of which depend on the temperature 32,36 . The impurities can be trapped into Si in this process, due to the high velocity (10 -1 -10 -3 m/s) of the amorphous-crystalline interface and the low diffusion velocity (10 -2 -10 -4 m/s) for FLA (for temperatures below 1300 °C) 10,37 . Thus, we can obtain the metastable solubility which is around one to two orders of magnitude larger than the maximum equilibrium solubility 32 .…”

Section: The Impurity Incorporation Of Ti Implanted Si Was Interpretementioning

confidence: 99%

Suppressing the cellular breakdown in silicon supersaturated with titanium

Liu¹,

Prucnal²,

Hübner³

et al. 2016

J. Phys. D: Appl. Phys.

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Abstract. Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.

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“…Alternatively, it has recently been demonstrated that millisecond range flash-lamp annealing (FLA) induces solid phase epitaxy which accounts for a complete recrystallization of the implanted layer at annealing temperatures below the melting point of substrate [20][21][22]. During this process, the impurities have more probability to be incorporated into the semiconductor lattice due to i) the high velocity of the solidification during recrystallization after FLA and ii) the low diffusion velocity of impurities in the solid phase [23,24]. It has been shown that FLA is superior to laser annealing in preventing the surface segregation of dopants and in suppressing the cellular breakdown for semiconductors with high impurity concentration [25,26].…”

Section: Introductionmentioning

confidence: 99%