Kinetics of low energy electron attachment to some chlorosilanes in the gas phase

Michalczuk, Bartosz; Barszczewska, W.

doi:10.1016/j.cplett.2019.137056

Cited by 3 publications

(10 citation statements)

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“…The aim of the work reported here was to study the kinetics of thermal electron attachment to some chlorinated silanes (chlorotrimethylsilane, dichlorodimethylsilane and chloromethyldimethylsilane) in carbon dioxide buffer gas using the pulsed Townsend method. The present work is a continuation of our previous studies, 19 where we have presented (for the first time) the results on fundamental quantities such as rate coefficients ( k ) and activation energies ( E a ) for thermal electron capture by some chlorosilanes. Systematic studies of k and E a for thermal electron captures allow a demonstration of the linear dependence between k and E a .…”

Section: Introductionmentioning

confidence: 71%

“…To our knowledge, for the investigated chlorosilanes, there are so far no literature kinetic data available for electron attachment. Therefore, the examination of the obtained results is based mainly on comparison with the kinetic data for other chlorosilanes investigated in our laboratory 19 and with the kinetic data for other molecules of similar structure.…”

Section: Resultsmentioning

confidence: 99%

“…In our previous paper 19 we presented the results of an investigation of electron attachment to a series of chlorosilanes (SiCH 3 Cl 3 , SiH(CH 3 ) 2 Cl, SiHCH 3 Cl 2 and Si(C 2 H 5 ) 3 Cl). We found that the rate coefficients at 298 K for these molecules were also of the same order of magnitude (8.72 × 10 −11 , 6.72 × 10 −11 , 16.8 × 10 −11 and 3.27 × 10 −11 cm 3 s −1 , respectively, for SiCH 3 Cl 3 , SiH(CH 3 ) 2 Cl, SiHCH 3 Cl 2 and Si(C 2 H 5 ) 3 Cl) (Table 1).…”

Section: Resultsmentioning

confidence: 99%

“…To the best of our knowledge, there are no available kinetic data on electron attachment to Si(CH 3 ) 3 Cl, Si(CH 3 ) 2 Cl 2 and SiH(CH 3 ) 2 (CH 2 Cl). The only paper that reports the electron attachment rate coefficients for chlorosilanes comes from our laboratory 19 . The data were obtained for molecules such as SiCH 3 Cl 3 , SiH(CH 3 ) 2 Cl, SiHCH 3 Cl 2 and Si(C 2 H 5 ) 3 Cl.…”

Section: Introductionmentioning

confidence: 99%

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Low‐energy electron interactions with chlorotrimethylsilane (Si(CH₃)₃Cl), dichlorodimethylsilane (Si(CH₃)₂Cl₂) and chloromethyldimethylsilane (SiH(CH₃)₂(CH₂Cl))

Michalczuk

Barszczewska

2021

Rapid Comm Mass Spectrometry

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Rationale Silane derivatives are widely used in industrial plasmas for manufacturing lighting devices, solar cells, displays, etc. Models of technological plasmas require quantitative data. The rate coefficients (k) and the activation energies (Ea) of thermal electron attachment for chlorotrimethylsilane (Si(CH3)3Cl), dichlorodimethylsilane (Si(CH3)2Cl2) and chloromethyldimethylsilane (SiH(CH3)2(CH2Cl)) are reported. This is important for understanding the basic processes occurring in plasmas. Methods The pulsed Townsend technique (known as the electron swarm method) has been applied for the measurements. In this technique, electrons generated by a laser, under a uniform electric field, traverse to an anode and induce a charge on it. In the buffer gas charge grows linearly, but in the presence of a scavenger, electrons are captured, and thus the rate of charge increase slows down with time. From the shape of the pulse, the kinetic parameters are determined. Results Kinetic parameters from the study of thermal electron attachment by Si(CH3)3Cl, Si(CH3)2Cl2 and SiH(CH3)2(CH2Cl) were determined for the first time. The corresponding rate coefficients at 298 K are equal to (9.56 ± 0.02) × 10−11, (6.62 ± 0.02) × 10−11 and (1.24 ± 0.05) × 10−11 cm3 s−1 and Ea values are equal to 0.29 ± 0.01, 0.24 ± 0.01 and 0.31 ± 0.01 eV for Si(CH3)3Cl, Si(CH3)2Cl2 and SiH(CH3)2(CH2Cl), respectively. The experiment was performed in the 298–378 K temperature range. Conclusions The presented results provide important new information about fundamental quantities such as rate coefficients and activation energies for thermal electron capture by chlorinated derivatives of silane. These data can further advance our understanding of thermal electron interactions with chlorosilanes that can be used to control the important species in the plasmas of many modern technologies.

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Section: Introductionmentioning

confidence: 71%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low‐energy electron interactions with chlorotrimethylsilane (Si(CH₃)₃Cl), dichlorodimethylsilane (Si(CH₃)₂Cl₂) and chloromethyldimethylsilane (SiH(CH₃)₂(CH₂Cl))

Michalczuk

Barszczewska

2021

Rapid Comm Mass Spectrometry

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“…In previous articles in this series [ 13 , 14 ], we focused on the importance of quantitative data regarding the process of electron attachment by the chlorosilanes. These data are necessary for both understanding the basic processes in plasma and for modelling the plasma processing procedure [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Low Energy Electron Attachment by Some Chlorosilanes

et al. 2021

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In this paper, the rate coefficients (k) and activation energies (Ea) for SiCl4, SiHCl3, and Si(CH3)2(CH2Cl)Cl molecules in the gas phase were measured using the pulsed Townsend technique. The experiment was performed in the temperature range of 298–378 K, and carbon dioxide was used as a buffer gas. The obtained k depended on temperature in accordance with the Arrhenius equation. From the fit to the experimental data points with function described by the Arrhenius equation, the activation energies (Ea) were determined. The obtained k values at 298 K are equal to (5.18 ± 0.22) × 10−10 cm3·s−1, (3.98 ± 1.8) × 10−9 cm3·s−1 and (8.46 ± 0.23) × 10−11 cm3·s−1 and Ea values were equal to 0.25 ± 0.01 eV, 0.20 ± 0.01 eV, and 0.27 ± 0.01 eV for SiHCl3, SiCl4, and Si(CH3)2(CH2Cl)Cl, respectively. The linear relation between rate coefficients and activation energies for chlorosilanes was demonstrated. The DFT/B3LYP level coupled with the 6-31G(d) basis sets method was used for calculations of the geometry change associated with negative ion formation for simple chlorosilanes. The relationship between these changes and the polarizability of the attaching center (αcentre) was found. Additionally, the calculated adiabatic electron affinities (AEA) are related to the αcentre.

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State of the art in dissociative electron attachment spectroscopy and its prospects

Pshenichnyuk¹,

Asfandiarov²,

Воробьев³

et al. 2022

Phys.-Usp.

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The latest achievements are presented in experimental and theoretical studies of resonance scattering of low-energy (0–15 eV) electrons from molecular targets in a gas phase resulting in the formation and decay of negative ions. The focus is on dissociative electron attachment spectroscopy for studying the microsecond dynamics of molecules containing an excess electron. Some studies of fundamental processes in isolated negative ions containing up to several electronvolts of excess energy are briefly described, and the possibility of using the results in interdisciplinary fields is discussed. A goal of the paper is to attract attention to the above-mentioned studies, which are rapidly developing abroad but only scarcely presented in the domestic literature.

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Kinetics of low energy electron attachment to some chlorosilanes in the gas phase

Cited by 3 publications

References 36 publications

Low‐energy electron interactions with chlorotrimethylsilane (Si(CH₃)₃Cl), dichlorodimethylsilane (Si(CH₃)₂Cl₂) and chloromethyldimethylsilane (SiH(CH₃)₂(CH₂Cl))

Low‐energy electron interactions with chlorotrimethylsilane (Si(CH₃)₃Cl), dichlorodimethylsilane (Si(CH₃)₂Cl₂) and chloromethyldimethylsilane (SiH(CH₃)₂(CH₂Cl))

Low Energy Electron Attachment by Some Chlorosilanes

State of the art in dissociative electron attachment spectroscopy and its prospects

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Kinetics of low energy electron attachment to some chlorosilanes in the gas phase

Cited by 3 publications

References 36 publications

Low‐energy electron interactions with chlorotrimethylsilane (Si(CH3)3Cl), dichlorodimethylsilane (Si(CH3)2Cl2) and chloromethyldimethylsilane (SiH(CH3)2(CH2Cl))

Low‐energy electron interactions with chlorotrimethylsilane (Si(CH3)3Cl), dichlorodimethylsilane (Si(CH3)2Cl2) and chloromethyldimethylsilane (SiH(CH3)2(CH2Cl))

Low Energy Electron Attachment by Some Chlorosilanes

State of the art in dissociative electron attachment spectroscopy and its prospects

Contact Info

Product

Resources

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Low‐energy electron interactions with chlorotrimethylsilane (Si(CH₃)₃Cl), dichlorodimethylsilane (Si(CH₃)₂Cl₂) and chloromethyldimethylsilane (SiH(CH₃)₂(CH₂Cl))

Low‐energy electron interactions with chlorotrimethylsilane (Si(CH₃)₃Cl), dichlorodimethylsilane (Si(CH₃)₂Cl₂) and chloromethyldimethylsilane (SiH(CH₃)₂(CH₂Cl))