Kinetics of recombination in nitrogen-doped GaP

Abstract

The doping dependence of the bulk efficiency for both n- and p-type GaP:N has been investigated experimentally and theoretically. Experimental data are presented for p-type Zn,N-doped, n-type Te,N-doped, and n-type S,N-doped GaP over a majority-carrier range 5×1016−2×1018 cm−3. The efficiency data and photoluminescent decay time data on the same samples are compared to a simple equilibrium model for the recombination kinetics in nitrogen-doped GaP. The model predicts that the efficiency should scale linearly with the minority-carrier lifetime, majority-carrier concentration, and the nitrogen concentration in the doping range considered. The comparison of the theoretical results with the experimental data shows that the bulk efficiency of p-type material agrees quantitatively with the analytical prediction. For Te- and S-doped material, which have widely different and varying minority-carrier lifetimes, the bulk efficiency of n-type material is shown to depend linearly upon the minority-carrier lifetime over the entire doping range considered. However, the normalized efficiency η/τmc is shown to depend upon the net donor concentration as η/τmc∝(ND-NA)0.5−0.6 above ND−NA≈3×1016 cm−3, independent of the donor, rather than linearly as predicted by theory. This deviation from theory remains unexplained. The data and analysis suggest that screening is of little importance over the doping rane considered. The lower limit on the nonradiative Auger lifetime of the bound excitons in p-type material is determined to be τxA≥(100−200)(1017cm−3/p) nsec. The strong variation of the minority-carrier lifetime with doping for n-type material is attributed to nonradiative centers extrinsic to the nitrogen center because of the different dependences observed for S- and Te-doped material and no firm conclusion can be drawn about the strength of nonradiative Auger recombination.

Intensity of emission from intracenter 4f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions

“…The emission spectra of single crystal ZnO films are similar to the spectra of bulk ZnO crystals [20] and are comparable in emission intensity I, FWHM, and peak position λ max of the emission line.…”

“…The following two processes involve a REI trap with excited intracenter states and an electron (hole) at a neutral donor (acceptor) [20]. An impor tant role is played by Auger quenching involving free carriers in wide gap semiconductors at high tempera tures and under laser excitation [20].…”

Electrical and luminescence properties of Mg‐doped p‐type GaPN grown by molecular beam epitaxy

“…3, the PL intensity decreases with increasing the hole concentration corresponding to Mg concentration and thus it is considered that this quenching of the PL emission is caused by the nonradiative recombination centres due to Mg doping, when the hole concentration is larger than ~10 18 cm -3 . Dapkus et al [21] have reported the hole concentration dependence of the effective lifetime for Zn-doped p-type GaP:N grown by liquid-phase epitaxy, where the effective lifetime is reduced and PL quenching occurs due to the acceptor doping larger than ~10 18 cm -3 . Therefore, these results suggest that the hole concentration of p-type GaPN cladding layer surrounds the active layer should be less than ~10 18 cm -3 .…”

Kinetics of the excitonic radiative recombination in WS2:Br2 and MoS2:Cl2 layered crystals

“…The steady-state luminescence intensity as function of temperature can be described using an excitonic recombination kinetic model, similar to the model proposed for n-type GaP:N [10]. The recombination shunt channel involving the broadband IR emission via D-deep level is described by the holes shunt-path capture time, t S (see the text that follows).…”