Kinetics of Silicon Growth under Low Hydrogen Pressure

Abstract

The kinetics of silicon deposition have been studied in a reactor working under reduced hydrogen pressure between 10 Torr and atmospheric pressure (760 Tort) for the following silicon sources: SiI-I4~ SiH2C12, SiHCI~, and SIC14. In every case, the kinetics are controlled by the surface at 10w hydrogen pressure whereas at higher pressure the mass transfer becomes slower. When the kinetics are controlled by the surface, the deposition rate is inversely proportional to the square root of the hydrogen pressure and is activated. In the opposite case the deposition rate is inversely proportional to the hydrogen pressure and does not depend on the temperature. This result, and the fact that the depositions are monocrystalline even at low temperature when the pressure is lower than 70 Torr, show that the hydrogen is strongly adsorbed on the silicon surface. 2he deposition made at low pressure and low tem~ perature have abrupt impurity profiles whictl allow us to realize: good quality microwave components.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-03-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-03-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-03-16 to IP

Rate-determining process in chemical vapor deposition of SiC on off-axis α-SiC (0001Nakamura1, Kimoto2, Matsunami3 2004Journal of Crystal Growth8140View full textAdd to dashboardCite

“…A similar dependence of growth rate on the total pressure, as in this experimental result, was reported [5][6][7] for homoepitaxial growth on Si ð1 1 1Þ: The homoepitaxial (step-flow) growth rate of monocrystalline Si is inversely proportional to the square of total pressure, as opposed to the inversely-proportional dependence for deposition of polycrystalline Si. A model [8] was proposed to explain the experimental results, where the growth is limited by migration of Si species (Si atoms and/ or SiH x molecules), which is inhibited by hydrogen atoms adsorbed or chemisorbed on a substrate; Competition between Si species and hydrogen atoms for coverage of ''active sites,'' with most of active sites occupied by hydrogen atoms, determines the growth rate.…”

From monosilane to crystalline silicon. Part III. Characterization of amorphous, hydrogen-containing silicon products

“…The reaction rate is reported [13] to increase with the temperature at lower pressures ($13 kPa), while on increasing pressure the reaction rate becomes more and more independent of the temperature (temperature independent above 0.07 MPa). One reason for the interest in pyrolysis of monosilane performed under low total pressure, compared to atmospheric pressure, is that one can decompose a larger share of monosilane in diluted mixture without obtaining socalled fines (small amorphous silicon particles of some nm size or agglomerates of such particles not exceeding 10 nm).…”

Kinetic Theory of Autodoping in Reduced Pressure Epitaxy of Silicon

“…4, which are calculated by using Eqs. (2) , (5), and (6), for F = 2.7X10-3, and for different values of diffusion length, L. We assume that the gas temperature, Tq, is uniform near the boundary layer and 50°C lower than the growth temperature, T. In Fig.4, are designated on the curves different values of L which is inversely proportional to PT@, shown in Eq. 9, and is shown the dashed curve of a strict solution by using Eq.…”

“…Experimental results by many workers show that autodoping is remarkably suppressed by reducing the total pressure, PT, to about Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1982512 100 Torr which is not so low comparing with the atmospheric pressure. [2,3,4] For 100 Torr and 1000°C, the mean free path of impurity atoms, arsenic (As) in this case, is as small as the order of 1 0 ' + c m . On the other hand, the thickness of the boundary layer, 6 , in ordinary conditions is estimated to be 0.1-1 cm by the Eversteyn theory- [5] and 1-10 cm by the usual theory [6], which are much larger than the above value of the mean free path, resulting the small escaping probability of As atoms beyond the boundary layer, about exp(-1000).…”