The kinetics of silicon deposition have been studied in a reactor working under reduced hydrogen pressure between 10 Torr and atmospheric pressure (760 Tort) for the following silicon sources: SiI-I4~ SiH2C12, SiHCI~, and SIC14. In every case, the kinetics are controlled by the surface at 10w hydrogen pressure whereas at higher pressure the mass transfer becomes slower. When the kinetics are controlled by the surface, the deposition rate is inversely proportional to the square root of the hydrogen pressure and is activated. In the opposite case the deposition rate is inversely proportional to the hydrogen pressure and does not depend on the temperature. This result, and the fact that the depositions are monocrystalline even at low temperature when the pressure is lower than 70 Torr, show that the hydrogen is strongly adsorbed on the silicon surface. 2he deposition made at low pressure and low tem~ perature have abrupt impurity profiles whictl allow us to realize: good quality microwave components.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-03-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-03-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-03-16 to IP

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Die Kinetik der Si‐ Abscheidung in einem unter vermindertem Hg‐Druck (10‐760 Torr) arbeitenden Reaktor wird für SiH4, SiH2Cl2 , SiHCl3 und SiCl4 als Si‐Quellen untersucht.