Kinetics of Two-Dimensional Electrons and Holes in Tunneling Silicon MOS Structures

The Self-Compression of Injected Electron-Hole Plasma in Silicon

“…150 mA, the efficiency of the Si : P diodes is estimated as gh % (1-3) Â 10 --3 . At the diode current J 0 ¼ 200 mA, the integral intensity of the EHline is much higher than the integral intensity of electroluminescence of free excitons observed in the same diodes at the temperature T ¼ 140 K [14][15][16]. The energy gap temperature that is quite different from the diode temperature, the optical hysteresis in the intensity-current dependence, and the very high quantum efficiency of the luminescence can be explained by condensation of the injected electron-hole plasma in the Si : P diodes into a dense surface state.…”

“…(b) 232, No. 2 (2002) Electroluminescence spectra of two-dimensional carriers at a silicon surface in the diodes at T ¼ 1:5 K [ [14][15][16] show that the surface quantum well in the diodes is deep, and screening of an electrical field at a silicon surface should be nearly quantum at room temperature and densities of surface carriers n s % (1-3) Â 10 13 cm --2 . However, the density of carriers at upper quantum levels in the surface potential well can be relatively high at room temperatures.…”

“…1. Band diagram of the Si : P diode in the model of the plasma condensation tunneling current of holes, defined by the injection potential U 0 , and a high efficiency of injection can be achieved at relatively low values of U 0 and low energies of injected holes, if the oxide thickness is low [16].…”