A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature K T 300 ≥. The internal quantum efficiency of the luminescence, equal to 3 10) 3 1 (− × ÷ , appears to be unexpectedly high. The spectral position of the luminescence line indicates, that a weak overheating of the diode by the diode current results in an anomalously strong reduction of the semiconductor energy gap inside the electron-hole plasma. A unique threshold optical hysteresis is observed in the luminescence intensity with changing diode current. These results are explained by condensation of injected electron-hole plasma into a dense state. A reduction of the semiconductor energy gap due to generation of phonons by the plasma is discussed as a reason of the plasma condensation. The plasma condensation is identified as the plasma self-compression. 3

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A surface distribution of the electroluminescence intensity of silicon p–n light‐emitting diodes is obtained under space‐scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting dots and a weakly emitting area outside the dots, serves as direct evidence of the self‐compression of injected electron–hole plasma in silicon. The plasma self‐compression explains concentration of injected carriers into one or a few strongly emitting plasma drops. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This paper repons the effect of gram parameters and buffer structure on the ILminescence, electrical ano strLctLral character stics of thin (< 2pm)A two-stage SJostrate temperature groffln regime has been oeve oped on the basis of a thermodynam:c consideraton of the growth process, taking 'nto account the additional Gibbs free energy due 10 the strain at the 'nitial growth. Tnis reg'me permits tne grorvtn of GaSb eplayers w:lh a smal Sb/Ga ratio at high substrate temperatures: it provides a greater excaon photoluminescence (PL) intens'ly and Hal mobil'ty (over 5000 cm2 V-' s-' a t 77 K) and improves tne layer quality. The appearance of a free exciton lminescence I:ne (809 meV) in the PL spectra of MBE GaSb/GaAs 's reponed for the frst h e . It is also shown thai a (50 A AISb/50 A GaSb)lo snon-per:od sLperian;ce prevents non-radiat:ve recombination centres and carr:er scanering centres from propagating 'n the top GaSo layer bJt does not bend the misfil oklocaton growing thrOJgh the layer from the GaSblGaAs interface.

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