Bistable electroluminescence of tunneling silicon MOS structures

Altukhov, P. D.; Bulgakov, A.G.; Ivanov, G. R.; Kuzminov, E. G.

doi:10.1016/s0038-1098(97)00151-8

Cited by 7 publications

(5 citation statements)

References 2 publications

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“…150 mA, the efficiency of the Si : P diodes is estimated as gh % (1-3) Â 10 --3 . At the diode current J 0 ¼ 200 mA, the integral intensity of the EHline is much higher than the integral intensity of electroluminescence of free excitons observed in the same diodes at the temperature T ¼ 140 K [14][15][16]. The energy gap temperature that is quite different from the diode temperature, the optical hysteresis in the intensity-current dependence, and the very high quantum efficiency of the luminescence can be explained by condensation of the injected electron-hole plasma in the Si : P diodes into a dense surface state.…”

Section: Methodsmentioning

confidence: 75%

“…(b) 232, No. 2 (2002) Electroluminescence spectra of two-dimensional carriers at a silicon surface in the diodes at T ¼ 1:5 K [ [14][15][16] show that the surface quantum well in the diodes is deep, and screening of an electrical field at a silicon surface should be nearly quantum at room temperature and densities of surface carriers n s % (1-3) Â 10 13 cm --2 . However, the density of carriers at upper quantum levels in the surface potential well can be relatively high at room temperatures.…”

Section: Tunneling Silicon Mos Diodesmentioning

confidence: 99%

“…Tunneling silicon MOS diodes (figure 1) were fabricated on n-type silicon substrates with the phosphorus concentration Elecroluminescence spectra of two-dimensional carriers at a silicon surface in the diodes at K T 5 . 1 = [14][15][16] show, that the surface quantum well in the diodes is deep and screening of an electrical field at a silicon surface should be almost quantum at room temperatures and densities of surface carriers…”

Section: Tunneling Silicon Mos Diodesmentioning

confidence: 99%

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The Self-Compression of Injected Electron-Hole Plasma in Silicon

Altukhov¹,

Kuzminov²

2002

phys. stat. sol. (b)

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A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature K T 300 ≥. The internal quantum efficiency of the luminescence, equal to 3 10) 3 1 (− × ÷ , appears to be unexpectedly high. The spectral position of the luminescence line indicates, that a weak overheating of the diode by the diode current results in an anomalously strong reduction of the semiconductor energy gap inside the electron-hole plasma. A unique threshold optical hysteresis is observed in the luminescence intensity with changing diode current. These results are explained by condensation of injected electron-hole plasma into a dense state. A reduction of the semiconductor energy gap due to generation of phonons by the plasma is discussed as a reason of the plasma condensation. The plasma condensation is identified as the plasma self-compression. 3

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Section: Methodsmentioning

confidence: 75%

Section: Tunneling Silicon Mos Diodesmentioning

confidence: 99%

Section: Tunneling Silicon Mos Diodesmentioning

confidence: 99%

See 1 more Smart Citation

The Self-Compression of Injected Electron-Hole Plasma in Silicon

Altukhov¹,

Kuzminov²

2002

phys. stat. sol. (b)

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“…2, middle, spectrum 2) is observed as well as the recombination radiation line of 2D electrons and 2D injected holes in Si : P tunneling MOS diodes (Fig. [1]. The Si : B diodes were fabricated on p-type silicon substrates with the boron concentration n A = 8 Â 10 20 m ±3 .…”

Section: Resultsmentioning

confidence: 99%

“…Introduction Recent investigations of electroluminescence and current instabilities of tunneling silicon MOS diodes show that a dense two-dimensional (2D) electron layer, screening an electrical field, and an additional 2D hole layer are formed at a silicon surface under tunneling injection of holes into a selforganized hole quantum well [1,2]. The recombination radiation line (S-line) of 2D electrons and 2D injected holes is observed [1,2].…”

mentioning

confidence: 99%