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Dependence of RF power on the phase transformation for boron nitride films deposited on graphite at room temperature

“…In Fig. 6(a), the optical transmittance is about 65% in the visible range of 400À800 nm, which is lower with respect to the previous reports on cBN films [20] due to the existence of graphite contamination in the suspension. An absorption tail near 240 nm is seen.…”

The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

“…This is clearly coincident with the experimental observations that the h-BN interfacial layer forms preferentially before the c-BN nucleates at the initial stage. 25,26 Obviously, the resultant values of bond lengths of B-N are slightly larger than the experimental ones, which may due to the fact that GGA always expects a large electron density gradients in the system. 22 For B-C (111) hetero-interface, the variety between 12 and 14 layers models were relatively small and the 12 layers model have a better periodicity for calculation and analysis.…”

Review of synthesis and properties of cubic boron nitride (c-BN) thin films

“…The optical absorption coefficient and refractive index have been calculated from the transmittance and reflection spectra. 242 With increasing c-BN content, the absorption edge shifts to the higher energy, indicating that the optical band gap of the BN films increases with c-BN content. The dependence of a on the photon energy has been fitted by the Urbach tail model and the band-to-band transition model at the two different energy regions, and the optical band gap of the BN films was obtained from the fits.…”