2019
DOI: 10.1039/c9ra00784a
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The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

Abstract: Clarifying the electronic states and structures of the c-BN/diamond interface is of extreme importance for bundling these two different wide-band gap materials in order to synthesize hybrid structures with new functional properties.

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Cited by 19 publications
(7 citation statements)
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“…As the thickness of the heterojunction increases, the band gap narrows and takes on a metallic characteristic. This phenomenon has been observed previously in the slab models of diamond/cBN(111) interfaces, 40 indicating that interfacial conduction is general. As the thickness increases, the distribution and intensity of the DOS near the Fermi level become broader and more intense.…”
Section: Validation Of 2d Carriers In the Heterostructuressupporting
confidence: 83%
“…As the thickness of the heterojunction increases, the band gap narrows and takes on a metallic characteristic. This phenomenon has been observed previously in the slab models of diamond/cBN(111) interfaces, 40 indicating that interfacial conduction is general. As the thickness increases, the distribution and intensity of the DOS near the Fermi level become broader and more intense.…”
Section: Validation Of 2d Carriers In the Heterostructuressupporting
confidence: 83%
“…It should be noted that diamond can also make deep influence in optoelectronic applications. The type-II band alignment can be observed when diamond is constructed with TiO 2 and BN [39,40]. Such alignment can promote the separation of electrons and holes, which shows potential applications in photocatalytic water splitting (Figure 4c and d).…”
Section: Heterostructures Of Diamond and Other Materialsmentioning
confidence: 97%
“…(d) Schematic representation of the relative position of the valence band and conduction band edges of (111) c-Bn/diamond heterostructure with c-B (left) and c-n (right) bonding configurations. adapted with permission from [40]. copyright 2019, Royal Society of chemistry.…”
Section: Heterostructures Of Diamond and Other Materialsmentioning
confidence: 99%
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“…[9,10] Several theoretical studies of diamond/c-BN heterostructures with interfacial chemical bonds have been performed. [11,12] As is well known, the reconstruction or functionalization in diamond is essential for stabilizing the structures. [13] The H-terminated diamond samples are generally obtained in hydrogen plasma environment through the chemical vapor deposition method, [14] and the c-BN films could be treated by microwave hydrogen-plasma to obtain the hydrogenated c-BN surfaces.…”
Section: Introductionmentioning
confidence: 99%