Kondo effect in graphene with Rashba spin-orbit coupling

Mastrogiuseppe, Diego; Wong, Arturo; Ingersent, Kevin; Ulloa, Sergio E.; Sandler, Nancy

doi:10.1103/physrevb.90.035426

Cited by 41 publications

(74 citation statements)

References 59 publications

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“…The influence of the SOI on the Kondo effect in 2d TIs has been addressed in several numerical works [28][29][30][31][32] , particularly focusing on the behavior of the Kondo temperature. In overall agreement with Ref.…”

Section: Introductionmentioning

confidence: 99%

Spatial structure of correlations around a quantum impurity at the edge of a two-dimensional topological insulator

2017

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We calculate exact zero-temperature real space properties of a substitutional magnetic impurity coupled to the edge of a zigzag silicene-like nanoribbon. Using a Lanczos transformation [Phys. Rev. B 91, 085101 (2015)] and the density matrix renormalization group method, we obtain a realistic description of stanene and germanene that includes the bulk and the edges as boundary one-dimensional helical metallic states. Our results for substitutional impurities indicate that the development of a Kondo state and the structure of the spin correlations between the impurity and the electron spins in the metallic edge state depend considerably on the location of the impurity. More specifically, our real space resolution allows us to conclude that there is a sharp distinction between the impurity being located at a crest or a trough site at the zigzag edge. We also observe, as expected, that the spin correlations are anisotropic due to an emerging Dzyaloshinskii-Moriya interaction with the conduction electrons, and that the edges scatter from the impurity and "snake" or circle around it. Our estimates for the Kondo temperature indicate that there is a very weak enhancement due to the presence of spin-orbit coupling.

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Section: Introductionmentioning

confidence: 99%

Spatial structure of correlations around a quantum impurity at the edge of a two-dimensional topological insulator

2017

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“…Our results show that the Kondo temperature for a substitutional impurity at a crest site is very weakly enhanced by the introduction of SOI, in agreement with numerical renormalization-group calculations of a similar problem [201,203]. For a adatom crest impurity, E corr contrastingly decreases with the SOI.…”

Section: Discussionsupporting

confidence: 74%

“…Unlike prior work by Zarea et al [202] that predicts an exponential enhancement of the Kondo temperature in the presence of SOI, we find that this enhancement is very weak, in agreement with numerical renormalization-group treatments of this problem [201,203]. First, the correlations are considerably larger (in magnitude) for a crest site than for a trough site.…”

Section: Spin Correlations and Kondo Temperature 731 Substitutionalcontrasting

confidence: 28%

“…For a crest site, panel (b), E corr actually decreases with the SOI for any value of U , while it increases for a trough site, at least for smaller values of U , becoming almost independent of λ SO for larger values of U . This again highlights the ability of our technique to uncover qualitative differences associated with real space resolution, which in general, cannot be achieved with other techniques used to analyze this problem [203]. As can be seen by comparing panels (a) and (b), the anisotropy is much larger for an impurity connected to a trough site than for a crest site, where the anisotropy almost vanishes.…”

Section: Adatom Impuritiesmentioning

confidence: 68%

“…The influence of the SOI on the Kondo effect in 2D TIs has been addressed in several numerical works [201][202][203][204][205], particularly focusing on the behavior of the Kondo temperature. In overall agreement with Ref.…”

Section: Introductionmentioning

confidence: 99%

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The ability to dope transition metal dichalcogenides such as tungsten diselenide (WSe2) with magnetic transition metal atoms in a controlled manner has motivated intense research with the aim of generating dilute magnetic semiconductors. In this work, semiconducting WSe2 monolayers, substitutionally doped with vanadium atoms, are investigated using low‐temperature luminescence and optoelectronic spectroscopy. V‐dopants lead to a p‐type doping character and an impurity‐related emission ≈160 meV below the neutral exciton, both of which scale with the nominal percentage of V‐dopants. Measurements using field‐effect devices of 0.3% V‐doped WSe2 demonstrate bipolar carrier tunability. The doped monolayers display a clear magnetic hysteresis in transport measurements both under illumination and without illumination, whereas the valley polarization of the excitons reveals a nonlinear g‐factor without a magnetic hysteresis within the experimental uncertainty. Hence, this work on V‐doped WSe2 provides crucial insights concerning suitable characterization methods on magnetic properties of doped 2D materials.

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Kondo effect in graphene with Rashba spin-orbit coupling

Cited by 41 publications

References 59 publications

Spatial structure of correlations around a quantum impurity at the edge of a two-dimensional topological insulator

Spatial structure of correlations around a quantum impurity at the edge of a two-dimensional topological insulator

A non-perturbative treatment of quantum impurity problems in real lattices

Defect‐Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers

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