KrF-excimer-laser-induced native oxide removal from Si (100) surfaces studied by Auger electron spectroscopy

Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux

“…The intermediate oxidation states of Si are not isolated, but they are additive such that each contributes to a broadening of the Si þ 4 oxidation state. The low intensity of the suboxide peaks is in agreement with a native oxide layer consisting mainly of SiO 2 and suboxide species located at the interface [19]. From Fig.…”

Laser induced removal of spherical particles from silicon wafers

“…Before applying particles, the Si pieces were immersed in acetone, and placed in an ultrasonic cleaner for 5 min, in order to remove possible organic and particulate contaminants. The substrate was then dipped in a 5% HF:H 2 O solution for 20 s for hydrogen passivation, 20 ͑DI͒ water afterwards. The particles on the silicon surface were applied by coating the silicon surface with a DI water suspension of silica particles.…”

Surface damages on single-crystal silicon during irradiation by a powerful ion beam

“…The higher thermal expansion coef ficient value for silicon (2.62 × 10 -6 К -1 ) with respect to the oxide (0.55 × 10 -6 К -1 ) leads to oxide film cracking under the pulsed heating and melting of silicon. When the SiO 2 melting temperature (~1700°С), which is higher than that of Si (1415°C), is reached, fragments of the damaged oxide layer can partly or completely dissolve in the liquid silicon [6]. The observed complex surface structures were interpreted as the frozen state of the convection current, caused by instability in the silicon melt.…”

“…The formation of surface structures as different shaped cells was observed on the surface of silicon with the (100) [6] and (111) [7] orientation after pulsed laser radiation action. The emergence of these structures has been connected to the presence of the natural oxide on the silicon surface.…”