L1o-CoPt/Co bilayer ferromagnetic films: interdiffusion, structure and microstructure

Kim, J.; Barmak, K.; Lewis, L. H.

doi:10.1016/s1359-6454(02)00302-6

Cited by 8 publications

(11 citation statements)

References 22 publications

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“…It is noted that all c and a values of L1 0 -CoPt obtained by hydrogen-and vacuumannealing in this study agree well with those reported previously. 24,25,28,56,57,[70][71][72] As the unit cell volume of L1 0 -CoPt (a 2 c) for hydrogen annealing at 800 °C for 60 min were slightly smaller than that for vacuum annealing at the same temperature and time, H atoms have not been dissolved well or should desorb during hydrogen annealing. , the multilayered films with 11.2 nm in thickness were deformed into agglomerated grains with the lateral sizes between 40 and 200 nm through surface diffusion, interdiffusion, alloying, and ordering of CoPt during annealing process at 800 °C.…”

Section: Discussionmentioning

confidence: 97%

Large coercivity of 13 kOe in L1₀-ordered CoPt on Si/SiO₂ substrates by hydrogen annealing

Toyama

Kawachi

Yamaura

et al. 2022

Jpn. J. Appl. Phys.

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L10-ordered CoPt with a large coercivity (Hc) of 13 kOe was demonstrated on Si/SiO2 substrates by hydrogen annealing. Equiatomic 11.2-nm-thick (Co/Pt)4 multilayer thin films were fabricated by electron-beam evaporation and were annealed at 500–900 °C for 10–90 min under an Ar/H2 mixed gas atmosphere. The annealing temperature and time dependences of the crystal structures, magnetic properties, and surface morphologies of the films were systematically analyzed based on the experimental results obtained from grazing incidence X-ray diffraction, vibrating sample magnetometer, and scanning electron microscope, respectively. Hydrogen annealing effectively promoted the out-of-plane c-axis orientation of L10-CoPt compared to the vacuum annealing according to the GI-XRD patterns. A maximum Hc of 13.3 kOe was obtained in L10-ordered CoPt with angular-outlined isolated grains by hydrogen annealing at 800 °C for 60 min, where the c-axis of L10-ordered CoPt was randomly distributed.

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Section: Discussionmentioning

confidence: 97%

Large coercivity of 13 kOe in L1₀-ordered CoPt on Si/SiO₂ substrates by hydrogen annealing

Toyama

Kawachi

Yamaura

et al. 2022

Jpn. J. Appl. Phys.

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“…Structural and magnetic studies were performed on polycrystalline CoPt films capped with a thin Co layer [6][7][8][9][10]. In this study, thin-film bilayers of fully ordered L1 0 -type CoPt with near-equiatomic composition and a thickness of 25 nm were fabricated on oxidized Si(100) substrates and capped by a single layer of cobalt with a thickness of 16.7 nm, which corresponds to 40% of the total bilayer thickness.…”

Section: Methodsmentioning

confidence: 99%

Interphase exchange effects in CoPt/Co bilayer thin films

Lewis¹,

Kim²,

Barmak³

et al. 2004

J. Phys. D: Appl. Phys.

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The condition of the interphase interface in model exchange-spring CoPt/Co bilayers was correlated with the magnetic response. Polycrystalline bilayer samples of 16.7-nm Co and 25-nm L10-type CoPt were fabricated and subsequently annealed to vary the condition of the interphase interface. Although the thickness of the soft phase component exceeded that for ideal (i.e. completely reversible) interlayer exchange coupling, this thickness allowed correlations between the interfacial condition and the magnetic quality of the exchange spring components to be observed and quantified via magnetic recoil measurements. Annealing the bilayers at 300°C for 20 min produced a 63.0% increase in the coercivity of the soft component, while at the same time the coercivity of the hard component was decreased by 18.5%.

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“…These lattice spacings of L1 0 -ordered CoPt and L1 2 -ordered CoPt 3 agree well with those found in previous reports. 16,17,19,53,[64][65][66][67][68][69] The degree of order (S) for L1 0 -ordered CoPt was evaluated as 0.9833 using the following equation: 70) = -…”

Section: Surface Morphologiesmentioning

confidence: 99%

Ti underlayer effect on the ordering of CoPt in (Co/Pt)₄ multilayer thin films on Si/SiO₂ substrates

Toyama

Kawachi

Yamaura

et al. 2020

Jpn. J. Appl. Phys.

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L12-ordered CoPt3 and L10-ordered CoPt are formed in electron-beam-deposited (Co/Pt)4 multilayer thin films with and without a Ti underlayer, respectively, on Si/SiO2 substrates by rapid thermal annealing. The crystal structures, magnetic properties, and surface morphologies of the films are investigated by grazing incidence X-ray diffraction (GI-XRD), vibrating sample magnetometer (VSM), and scanning electron microscope (SEM), respectively. In the film without a Ti underlayer, L10-ordered CoPt with an isolated round grain structure is confirmed, showing an in-plane coercivity of 2.7 kOe. In contrast, in the film with a Ti underlayer, L12-ordered CoPt3 is confirmed together with Co-rich A1-disordered CoPt, showing an in-plane coercivity of 500 Oe, which exhibits an angular-outlined continuous film structure. The three sets of experimental results from GI-XRD, VSM, and SEM coincide well with each other.

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L1o-CoPt/Co bilayer ferromagnetic films: interdiffusion, structure and microstructure

Cited by 8 publications

References 22 publications

Large coercivity of 13 kOe in L1₀-ordered CoPt on Si/SiO₂ substrates by hydrogen annealing

Large coercivity of 13 kOe in L1₀-ordered CoPt on Si/SiO₂ substrates by hydrogen annealing

Interphase exchange effects in CoPt/Co bilayer thin films

Ti underlayer effect on the ordering of CoPt in (Co/Pt)₄ multilayer thin films on Si/SiO₂ substrates

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L1o-CoPt/Co bilayer ferromagnetic films: interdiffusion, structure and microstructure

Cited by 8 publications

References 22 publications

Large coercivity of 13 kOe in L10-ordered CoPt on Si/SiO2 substrates by hydrogen annealing

Large coercivity of 13 kOe in L10-ordered CoPt on Si/SiO2 substrates by hydrogen annealing

Interphase exchange effects in CoPt/Co bilayer thin films

Ti underlayer effect on the ordering of CoPt in (Co/Pt)4 multilayer thin films on Si/SiO2 substrates

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Product

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Large coercivity of 13 kOe in L1₀-ordered CoPt on Si/SiO₂ substrates by hydrogen annealing

Large coercivity of 13 kOe in L1₀-ordered CoPt on Si/SiO₂ substrates by hydrogen annealing

Ti underlayer effect on the ordering of CoPt in (Co/Pt)₄ multilayer thin films on Si/SiO₂ substrates