La2Zr2O7 films on Cu–Ni alloy by chemical solution deposition process

Yu, Z.M.; Odier, P.; Ortéga, L.; Zhou, Lian; Zhang, P.X.; Girard, Antoine

doi:10.1016/j.mseb.2006.02.064

Cited by 26 publications

(17 citation statements)

References 18 publications

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“…Lanthanum zirconate was produced by MOD according to a procedure previously described [11]. Lanthanum (III) 2, 4-pentadionate and zirconium (IV) 2, 4-pentadionate were dissolved in propionic acid (CH 3 -CH 2 -COOH) to form lanthanum and zirconium propionates.…”

Section: Methodsmentioning

confidence: 84%

“…If voids are already present at 500°C, it means that gas accumulation takes place during the low temperature annealing step concerning pyrolysis of the organic precursor used in this MOD process. TGA performed separately for each precursor shows that main mass losses take place between 300°C and 400°C [11]. The shrinking in thickness also occurs in this temperature range.…”

Section: Discussionmentioning

confidence: 99%

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Effect of the annealing process on the microstructure of La2Zr2O7 thin layers epitaxially grown on LaAlO3 by metalorganic decomposition

Jiménez¹,

Caroff²,

Rapenne³

et al. 2009

Journal of Crystal Growth

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were varied to establish their influence on the microstructure of the LZO layers. XRD and TEM were used for sample characterisation. The epitaxial pyrochlore phase was obtained for annealing temperatures higher that 850°C whatever the other annealing conditions. However, the film microstructure, in particular, nanovoids shape and size, is strongly dependent on heating ramp and pressure during annealing. When using low heating ramp, percolation of voids creates diffusion channels for oxygen which are detrimental for the substrate protection during coated conductor fabrication. From this point of view high heating rates are more adapted to the growth of LZO layers.

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Section: Methodsmentioning

confidence: 84%

Section: Discussionmentioning

confidence: 99%

Effect of the annealing process on the microstructure of La2Zr2O7 thin layers epitaxially grown on LaAlO3 by metalorganic decomposition

Jiménez¹,

Caroff²,

Rapenne³

et al. 2009

Journal of Crystal Growth

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“…A LZO film was deposited on this new bi-metallic substrate by CSD technique [15]. In short, substrates (5 mm × 5 mm) were cut from longer tapes.…”

Section: Methodsmentioning

confidence: 99%

“…The LZO film was deposited on the Ni/Cu bi-metallic substrate by CSD method, and crystallized at 950 • C under reducing conditions (Ar-5%H 2 flow) [15]. are detected while diffraction of (222) LZO planes is absent.…”

Section: Depositing Lzo On the Ni/cu Bi-metallic Substratementioning

confidence: 99%

LZO covered Cu-based substrates

Odier

Ortéga

et al. 2008

Journal of Alloys and Compounds

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“…All chemical coated conductors have been achieved such as YBCO/Nb:STO/Ni [8]. For the first layer in the multilayer structure of coated conductors by CSD process the layer thickness of CeO 2 was limited by presence of cracks [9], whereas the texture and morphology of La 2 Zr 2 O 7 are rather sensitive to preparation conditions [10].…”

Section: Introductionmentioning

confidence: 99%