Label‐Free DNA Sensors Based on Field‐Effect Transistors with Semiconductor of Carbon Materials

Abstract

Over one decade, various DNA sensors of carbon material-based field-effect transistors (FETs) have been intensively developed into an inspiring area of research and technology to substitute for the traditional method, for instance, fluorescence labeling detection. These FET DNA sensors have advantages of: directly read-out electrical signal, no need to label DNA molecule with fluorescer, high sensitivity, facility of miniaturization, simple device preparation process, high signal-to-noise ratio (SNR) and wide detection range. This review gives a comprehensive description on the state-of-the-art carbon-based FET DNA sensors from the aspect of both semiconductor material and structure of device. Several essential points in this research field, including sensitivity, selectivity, stability and challenges are addressed. Optimization of sensing performance and application of these devices are also discussed.

Improved performances of inkjet-printed poly(3-hexylthiophene) organic thin-film transistors by inserting an ionic self-assembled monolayer

“…More importantly, an ionic SAM, which consisted of an anchoring group, a linker group, and an ionic functional group as the interfacial layer, was also adopted in the fabrication process to further improve the device performance. 25 The eld-effect mobility was enhanced by the insertion of Br(CH 2 ) 5 N(CH 3 ) 3 Br between the active layer and the electrode. 27,34 It is worthwhile to point out that the present case of inkjet-printed P3HT-based OTFTs is an important example for further developing the inkjet printing technology which is not yet mature.…”

“…24 Moreover, the electrode modication by means of plasma has limited inuence on decreasing the contact resistance. In contrast, the insertion of a self-assembled monolayer (SAM) between the electrode and the active layer has become an attractive method for reducing the relatively high contact resistance at the organic/ metal interface, 25 which can be realized via solution processing. 26 For example, Chung reported that an appropriate SAM layer was chosen to achieve low contact resistance, further enhancing the charge transport characteristics and device performance.…”