Landau-level spectroscopy of massive Dirac fermions in single-crystalline 
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 thin flakes

Jiang, Yuxuan; Dun, Zhiling; Zhou, H. D.; Lu, Zhengguang; Chen, K.-W.; Moon, Seungbin; Besara, Tiglet; Siegrist, T.; Baumbach, Ryan; Smirnov, Dmitry; Jiang, Zhigang

doi:10.1103/physrevb.96.041101

Cited by 45 publications

(39 citation statements)

References 48 publications

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“…As discussed below, this band gap is deduced from a small, but well-defined deviation of the interband inter-Landau level transitions from a √ B dependence, which is otherwise typical of massless (gapless) charge carriers. This points to a linear dispersion in the a-c plane, in agreement with previous work [6,10,19].…”

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confidence: 93%

Two-Dimensional Conical Dispersion in ZrTe5 Evidenced by Optical Spectroscopy

et al. 2019

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Zirconium pentatelluride was recently reported to be a 3D Dirac semimetal, with a single conical band, located at the center of the Brillouin zone. The cone's lack of protection by the lattice symmetry immediately sparked vast discussions about the size and topological/trivial nature of a possible gap opening. Here we report on a combined optical and transport study of ZrTe5, which reveals an alternative view of electronic bands in this material. We conclude that the dispersion is approximately linear only in the a-c plane, while remaining relatively flat and parabolic in the third direction (along the b axis). Therefore, the electronic states in ZrTe5 cannot be described using the model of 3D Dirac massless electrons, even when staying at energies well above the band gap 2∆ = 6 meV found in our experiments at low temperatures. arXiv:1905.00280v2 [cond-mat.mes-hall]

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confidence: 93%

Two-Dimensional Conical Dispersion in ZrTe5 Evidenced by Optical Spectroscopy

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“…Similarly, g(θ ba = 86.5 • ) = 5.3. The g factor has been experimentally determined as 15.8-24.3 in the b direction (21,41,42), but these values cannot be directly compared with our results obtained in directions close to the ac plane. A first principle calculation of the g factor has been carried out recently for a few topological materials, by which we obtain g(θ bc = 83.8 • ) = 9.6 and g(θ ba = 86.5 • ) = 0.3 (44).…”

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confidence: 56%

“…m * also differs significantly for different directions (21,30). Furthermore, the g factor has been found to be large (40)(41)(42), which helps gm * /me to span a larger range. In this regard, it should not be unexpected to see a spin-zero effect at a certain field angle, as observed in our study.…”

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confidence: 95%

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Vanishing quantum oscillations in Dirac semimetal ZrTe ₅

Wang

Niu

Yan

et al. 2018

Proc. Natl. Acad. Sci. U.S.A.

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One of the characteristics of topological materials is their nontrivial Berry phase. Experimental determination of this phase largely relies on a phase analysis of quantum oscillations. We study the angular dependence of the oscillations in a Dirac material [Formula: see text] and observe a striking spin-zero effect (i.e., vanishing oscillations accompanied with a phase inversion). This indicates that the Berry phase in [Formula: see text] remains nontrivial for arbitrary field direction, in contrast with previous reports. The Zeeman splitting is found to be proportional to the magnetic field based on the condition for the spin-zero effect in a Dirac band. Moreover, it is suggested that the Dirac band in [Formula: see text] is likely transformed into a line node other than Weyl points for the field directions at which the spin zero occurs. The results underline a largely overlooked spin factor when determining the Berry phase from quantum oscillations.

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“…The bulk band gap and the topological edge state were detected by ARPES and by STM [14,15,29], which indicates that ZrTe5 is a weak TI. Controversially, signatures of 3D Dirac semimetal were also demonstrated in magnetoresistance [18][19][20]32] and magneto-infrared spectroscopy measurements [12,13,17,24,25]. The strong TI of ZrTe5 has been also proposed [21,27].…”

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Turning ZrTe5 into a semiconductor through atom intercalation

Wang

et al. 2019

Sci. China Phys. Mech. Astron.

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In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap.Recently, ZrTe5 has attracted increasing attentions because of its mysterious topological nature. DFT calculation predicted that the single-layer ZrTe5 is an ideal two-dimensional topological insulator (2D TI) hosting an indirect band gap of ~0.1 eV [9], but its bulk counterpart resides in proximity of the boundary of topological phase transition from weak to strong TI, through a 3D Dirac semimetal state [9][10][11].Even though great efforts have been devoted to experimentally verify the topological characteristics, the topology of bulk ZrTe5 is still under heavy debate. Either weak TI, strong TI or Dirac semimetal state, has ever been proposed based on the experimental observations with different techniques . The bulk band gap and the topological edge state were detected by ARPES and by STM [14,15,29], which indicates that ZrTe5 is a weak TI. Controversially, signatures of 3D Dirac semimetal were also demonstrated in magnetoresistance [18][19][20]32] and magneto-infrared spectroscopy measurements [12,13,17,24,25]. The strong TI of ZrTe5 has been also proposed [21,27]. In addition, more exotic physical properties have been also found in this material, such as Zeeman splitting [20,33,34], Chiral Magnetic effect (CME) [16], 3D Quantum Hall effect (QHE) [35], Anomalous Hall effect (AHE) [36], Giant Planar Hall Effect (PHE) [37], and Discrete Scale Invariance (DSI) [38,39].Considering the extreme sensitivity of the band structure of ZrTe5 to the lattice constant, the above mentioned experimental divergence may be likely due to the difference in sample growth. It is worthwhile noting that the Dirac node of ZrTe5 is not protected by the crystal symmetry, and a band gap can be opened by a perturbation to turn it into topological insulator. High Pressure was applied to tune ZrTe5 into superconductivity [40], and to induce topological phase transition [41]. The exfoliated ZrTe5 nanosheet shows metallic behavior and tunable resistance maximum, which can be ascribed to the thickness-dependent band structure [42,43]. Up to now, most of the explored ZrTe5 bulk samples, grown by CVT method, behave as metallic

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Landau-level spectroscopy of massive Dirac fermions in single-crystalline ZrTe5 thin flakes

Cited by 45 publications

References 48 publications

Two-Dimensional Conical Dispersion in ZrTe5 Evidenced by Optical Spectroscopy

Two-Dimensional Conical Dispersion in ZrTe5 Evidenced by Optical Spectroscopy

Vanishing quantum oscillations in Dirac semimetal ZrTe ₅

Turning ZrTe5 into a semiconductor through atom intercalation

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Landau-level spectroscopy of massive Dirac fermions in single-crystalline ZrTe5 thin flakes

Cited by 45 publications

References 48 publications

Two-Dimensional Conical Dispersion in ZrTe5 Evidenced by Optical Spectroscopy

Two-Dimensional Conical Dispersion in ZrTe5 Evidenced by Optical Spectroscopy

Vanishing quantum oscillations in Dirac semimetal ZrTe 5

Turning ZrTe5 into a semiconductor through atom intercalation

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Product

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Vanishing quantum oscillations in Dirac semimetal ZrTe ₅