Landau level splitting in Cd3As2 under high magnetic fields

Cao, Jingxiao; Liang, Shufang; Zhang, Cheng; Liu, Yanwen; Huang, Junwei; Zhao, Jianhua; Chen, Zhigang; Wang, Zhijun; Wang, Qisi; Zhao, Jun; Li, Shiyan; Dai, Xi; Zou, Jin; Xia, Zhengcai; Li, Liang; Xiu, Faxian

doi:10.1038/ncomms8779

Cited by 140 publications

(170 citation statements)

References 33 publications

Supporting

Mentioning

148

Contrasting

Unclassified

Order By: Relevance

“…The obtained position of the Fermi level (100 meV) seems to be quite reasonable for our sample, taking into account its carrier concentration (6 × 10 17 cm −3 ) and keeping in mind that E F = 200 meV was reported for a sample with n e = 2 × 10 18 cm −3 [12] and E F = 286 meV for n e = 1.67 × 10 18 cm −3 [30]. Although the scope of this work is the interband conductivity in Cd 3 As 2 , let us briefly discuss the experimental results at the lowest frequencies measured.…”

Section: Discussionmentioning

confidence: 99%

Interband optical conductivity of the [001]-oriented Dirac semimetalCd3As2

Neubauer¹,

Ćarbotte²,

Nateprov³

et al. 2016

Phys. Rev. B

117

101

View full text Add to dashboard Cite

We measured the optical reflectivity of [001]-oriented n-doped Cd3As2 in a broad frequency range (50 -22 000 cm −1 ) for temperatures from 10 to 300 K. The optical conductivity, σ(ω) = σ1(ω) + iσ2(ω), is isotropic within the (001) plane; its real part follows a power law, σ1(ω) ∝ ω 1.65 , in a large interval from 2000 to 8000 cm −1 . This behavior is caused by interband transitions between two Dirac bands, which are effectively described by a sublinear dispersion relation, E(k) ∝ |k| 0.6 . The momentum-averaged Fermi velocity of the carriers in these bands is energy dependent and ranges from 1.2 × 10 5 to 3 × 10 5 m/s, depending on the distance from the Dirac points. We detect a gaplike feature in σ1(ω) and associate it with the Fermi level positioned around 100 meV above the Dirac points.

show abstract

Section: Discussionmentioning

confidence: 99%

Interband optical conductivity of the [001]-oriented Dirac semimetalCd3As2

Neubauer¹,

Ćarbotte²,

Nateprov³

et al. 2016

Phys. Rev. B

117

101

View full text Add to dashboard Cite

show abstract

“…Analysis of the SdH oscillations of MR gives a nontrivial π Berry phase, which is a distinguished feature of Dirac fermions. [9,10] This quantum oscillation is attributed to the Dirac band structure and ultrahigh carrier mobility of Dirac materials.…”

mentioning

confidence: 99%

Tensile strained gray tin: Dirac semimetal for observing negative magnetoresistance with Shubnikov–de Haas oscillations

Huang

Liu

2017

Phys. Rev. B

View full text Add to dashboard Cite

The extremely stringent requirement on material quality has hindered the investigation and potential applications of exotic chiral magnetic effect in Dirac semimetals. Here, we propose that gray tin is a perfect candidate for observing the chiral anomaly effect and Shubnikov-de-Haas (SdH) oscillation at relatively low magnetic field. Based on effective k.p analysis and first-principles calculations, we discover that gray tin becomes a Dirac semimetal under tensile uniaxial strain, in contrast to a topological insulator under compressive uniaxial strain as known before. In this newly found Dirac semimetal state, two Dirac points which are tunable by tensile [001] strains, lie in the kz axis and Fermi arcs appear in the (100) surface. Duo the low carrier concentration and high mobility of gray tin, a large chiral anomaly induced negative magnetoresistance and a strong SdH oscillation are anticipated in this half of strain spectrum. Comparing to other Dirac semimetals, the proposed Dirac semimetal state in the nontoxic elemental gray tin can be more easily manipulated and accurately controlled. We envision that gray tin provides a perfect platform for strain engineering of chiral magnetic effects by sweeping through the strain spectrum from positive to negative and vice versa.

show abstract

“…More importantly, 3D Dirac semimetals can be driven into various novel phases, such as Weyl semimetals, [13,14] topological insulators, [15] axion insulators, [16,17] and topological superconductors, [12] by breaking time reversal symmetry or inversion symmetry. Thus, 3D Dirac semimetal is a versatile platform for the systematic study of unusual quantum phase transitions between rich topological quantum states.…”

mentioning

confidence: 99%

Scalable Growth of High Mobility Dirac Semimetal Cd₃As₂ Microbelts

Chen¹,

Zhang

Zou³

et al. 2015

Nano Lett.

Self Cite

View full text Add to dashboard Cite

3Owing to unique band structure and inherent exotic physical properties originated from Dirac fermions with linear band dispersion, Dirac materials, such as graphene [1] and topological insulators, [2] have been considered as a promising candidate for nextgeneration electronic and spintronic devices. As the emerging three-dimensional (3D)Dirac materials, Cd3As2 [3] and Na3Bi [4] have been theoretically predicted and subsequently verified by the angle-resolved photoemission spectroscopy (ARPES) [5][6][7][8] and electric transport measurments, [9][10][11][12] in which the Dirac nodes are developed via the point contact of conduction-valence bands with linear dispersion in all 3D of kspace. More importantly, 3D Dirac semimetals can be driven into various novel phases, such as Weyl semimetals, [13,14] topological insulators, [15] axion insulators, [16,17] and topological superconductors, [12] by breaking time reversal symmetry or inversion symmetry. Thus, 3D Dirac semimetal is a versatile platform for the systematic study of unusual quantum phase transitions between rich topological quantum states.[4]Compared with the air-sensitive Na3Bi, Cd3As2 tends to be much stable at room temperature with a high chemical stability against oxidation, [18] which is an ideal system for 3D Dirac materials. Soon after the first prediction in Cd3As2, [3] photoemission spectroscopy revealed a pair of 3D Dirac nodes located on the opposite sides of the Brillouin zone center (Γ point), which are protected by the C4 rotational symmetry.[5]Transport measurements show that Cd3As2 exhibits ultrahigh mobility up to 9×10 6 cm 2 V -1 s -1 at 5 K, [9] a giant linear magnetoresistance, [10] and a nontrivial Berry phase [11] owing to the linear band dispersion and concomitant Dirac fermions. Very recently, a 4 pressure-induced superconductivity was also identified in Cd3As2 crystals, making it an promising candidate for the topological superconductors. [12] All these studies relied on the high-quality crystals prepared from the time consuming Flux method, which has hindered the research expansion and future practical applications.Here, we reported a new approach -facile and scalable chemical vapor deposition We grew Cd3As2 microbelts using Cd3As2 powders as the precursor in a horizontal tube furnace. After a typical growth procedure (see methods), high-quality needle-like crystals grown on silicon substrates are observable by naked-eyes. Figure 1a is a scanning electron microscopy (SEM) image that shows the typical morphology of asgrown microbelts, from which the belt-like crystals exhibit a length up to millimeter with smooth surfaces. The typical width and thickness are up to tens of micrometers.In order to determine their crystal structure, we carried out X-ray diffraction (XRD)analysis on a single microbelt with the belt surface normal to the XRD beam. Figure 1b shows the typical XRD pattern, in which a series of sharp peaks can be indexed to 5 {n,n,2n} (where n is an integer), further verifing that the longitudinal shining surfaces are {112}...

show abstract

Landau level splitting in Cd3As2 under high magnetic fields

Cited by 140 publications

References 33 publications

Interband optical conductivity of the [001]-oriented Dirac semimetalCd3As2

Interband optical conductivity of the [001]-oriented Dirac semimetalCd3As2

Tensile strained gray tin: Dirac semimetal for observing negative magnetoresistance with Shubnikov–de Haas oscillations

Scalable Growth of High Mobility Dirac Semimetal Cd₃As₂ Microbelts

Contact Info

Product

Resources

About

Landau level splitting in Cd3As2 under high magnetic fields

Cited by 140 publications

References 33 publications

Interband optical conductivity of the [001]-oriented Dirac semimetalCd3As2

Interband optical conductivity of the [001]-oriented Dirac semimetalCd3As2

Tensile strained gray tin: Dirac semimetal for observing negative magnetoresistance with Shubnikov–de Haas oscillations

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

Contact Info

Product

Resources

About

Scalable Growth of High Mobility Dirac Semimetal Cd₃As₂ Microbelts