Lanthanum doped lead zirconate titanate stannate antiferroelectric thin films from acetic acid-based sol–gel method

Energy‐Storage Properties of 0.89Bi0.5Na0.5TiO3–0.06BaTiO3–0.05K0.5Na0.5NbO3 Lead‐Free Anti‐ferroelectric Ceramics

“…Thereafter, the phase transition and field‐induced strain on this material system were investigated . AFE materials with “square” hysteresis loops generally possess higher energy density than those with “slanted” ones . But, it is very difficult for AFE materials with “square” hysteresis loops to withstand over several hundred charge–discharge circulations because it is often cracked due to the phase transition during the charge–discharge, more slanted hysteresis loops and smaller area of hysteresis loops will be helpful to the charge–discharge circulations .…”

Epitaxial strain stabilization of a ferroelectric phase in PbZrO3thin films

“…Thin films of AFEs have been extensively investigated for their potential applications in sensors, actuators, charge storage devices, and electro-optic devices. [1][2][3][4][5][6] In recent years the giant electrocaloric effect observed in some AFEs projected them as potential candidates for application in electrical refrigeration devices. 7,8 Besides their technological importance, AFEs are also interesting for fundamental studies.…”

The phase evolution with temperature in 0.94PbZrO3–0.06Pb(Mg1/2W1/2)O3 antiferroelectric ceramic

“…Recently, it was reported that antiferroelectric (Pb 1−x Ba x )ZrO 3 (PBZ) films, with a higher barium content of more than 45 mol%, were in paraelectric state at room temperature and possessed excellent dielectric properties comparable to (Ba,Sr)TiO 3 [6]. doping in PZ would be found to increase the stability range of the antiferroelectric phase [19,20]. Furthermore, Tan et al [20] studied the doping effect of various metal oxide elements on field-induced polarization in PZ ceramics and found that addition of Bi 3+ and K + substantially increased stability of the antiferroelectric phase.…”