2004
DOI: 10.1038/nmat1103
|View full text |Cite
|
Sign up to set email alerts
|

Large anomalous Hall effect in a silicon-based magnetic semiconductor

Abstract: Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to cons… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

12
226
3

Year Published

2006
2006
2024
2024

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 233 publications
(246 citation statements)
references
References 49 publications
12
226
3
Order By: Relevance
“…[17][18][19] Powder X-ray diffraction (XRD) spectra of the ground samples were taken with Cu Kα radiation (λ = 1.5418Å) using a Rigaku Miniflex x-ray machine. The lattice parameters were obtained by fitting the XRD pattern using the RIETICA software.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…[17][18][19] Powder X-ray diffraction (XRD) spectra of the ground samples were taken with Cu Kα radiation (λ = 1.5418Å) using a Rigaku Miniflex x-ray machine. The lattice parameters were obtained by fitting the XRD pattern using the RIETICA software.…”
Section: Methodsmentioning
confidence: 99%
“…[17][18][19][20] Forming solid solution, i.e., maximizing the influence of point-defect scattering by creating large mass difference and elastic strain at the lattice sites, proved to be an efficient approach to suppress the thermal conductivity and enhance ZT of some thermoelectric materials, such as filled skutterudites materials Co(Sb 1−x As x ) 3 , Co …”
Section: Introductionmentioning
confidence: 99%
“…It is important to mention that the bulk Mn-Pt-Ga system (when inhomogeneoous) shows a non-zero EB for temperatures up to only 150 K. [7] We now focus on transport measurements to characterize the CFI state and EB in Mn-Pt- Ga alloy. [13,14] It is interesting to note that The increase in the magnetization of the FC ) (H M loop in the bilayer film indicates that the exchange interaction at the interface also affects the total magnetic state of the sample. For more insight into this phenomenon we have measured the AHE of the bilayer film in ZFC and FC modes, as shown in Fig.…”
Section: Y=ptmentioning
confidence: 99%
“…Fe x Co (1−x) Si exhibits itinerant helimagnetic metallic behavior like MnSi for 0.4 < x < 0.9 (T c = 60K for x = 0.6) although the two end-compounds FeSi and CoSi do not exhibit any magnetic order [9][10][11][12]. Doping FeSi with Mn has revealed that the unscreened Kondo effect was at the origin of non-Fermi liquid behavior [13].…”
Section: Introductionmentioning
confidence: 99%