The desire to maximize the sensitivity of read/write heads (and thus the information density) of magnetic storage devices has stimulated interest in the discovery and design of new magnetic materials exhibiting magnetoresistance. Recent discoveries include the 'colossal' magnetoresistance in the manganites and the enhanced magnetoresistance in low-carrier-density ferromagnets. An important feature of these systems is that the electrons involved in electrical conduction are different from those responsible for the magnetism. The latter are localized and act as scattering sites for the mobile electrons, and it is the field tuning of the scattering strength that ultimately gives rise to the observed magnetoresistance. Here we argue that magnetoresistance can arise by a different mechanism in certain ferromagnets--quantum interference effects rather than simple scattering. The ferromagnets in question are disordered, low-carrier-density magnets where the same electrons are responsible for both the magnetic properties and electrical conduction. The resulting magnetoresistance is positive (that is, the resistance increases in response to an applied magnetic field) and only weakly temperature-dependent below the Curie point.

Weyl (WSMs) evolve from Dirac semimetals in the presence of broken time-reversal symmetry (TRS) or space-inversion symmetry. The WSM phases in TaAs-class materials and photonic crystals are due to the loss of space-inversion symmetry. For TRS-breaking WSMs, despite numerous theoretical and experimental efforts, few examples have been reported. In this Article, we report a new type of magnetic semimetal SrMnSb (y, z < 0.1) with nearly massless relativistic fermion behaviour (m =  0.04 - 0.05m, where m is the free-electron mass). This material exhibits a ferromagnetic order for 304 K < T < 565 K, but a canted antiferromagnetic order with a ferromagnetic component for T < 304 K. The combination of relativistic fermion behaviour and ferromagnetism in SrMnSb offers a rare opportunity to investigate the interplay between relativistic fermions and spontaneous TRS breaking.

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we 1 report the discovery that the bulk metallic magnets derived from doping the narrow gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, and which we have proven to display a variety of large magnetic field effects on easily measured electrical properties.

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Landau-Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply understood as independent particles with effective masses replacing the free electron mass, has been astonishingly successful. This is true despite the Coulomb interactions an electron experiences from the host crystal lattice, lattice defects and the other approximately 10(22) cm(-3) electrons. An important extension to the theory accounts for the behaviour of doped semiconductors. Because little in the vast literature on materials contradicts Fermi liquid theory and its extensions, exceptions have attracted great attention, and they include the high-temperature superconductors, silicon-based field-effect transistors that host two-dimensional metals, and certain rare-earth compounds at the threshold of magnetism. The origin of the non-Fermi liquid behaviour in all of these systems remains controversial. Here we report that an entirely different and exceedingly simple class of materials-doped small-bandgap semiconductors near a metal-insulator transition-can also display a non-Fermi liquid state. Remarkably, a modest magnetic field functions as a switch which restores the ordinary disordered Fermi liquid. Our data suggest that we have found a physical realization of the only mathematically rigorous route to a non-Fermi liquid, namely the 'undercompensated Kondo effect', where there are too few mobile electrons to compensate for the spins of unpaired electrons localized on impurity atoms.