Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC

Agarwal, Anant; Ryu, Sei-Hyung; Richmond, Jim; Capell, Craig; Palmour, John W.; Tang, Yi; Balachandran, S.; Chow, T. Paul

doi:10.1109/ispsd.2003.1225248

Cited by 19 publications

(15 citation statements)

References 4 publications

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“…A supply voltage of 500 V was used. The turn-on time of 32 ns and a turn-off time of about 60 ns were observed at 25 C, which is fast compared to the turn-on and turn-off times observed in our earlier work [8]. Such fast switching transients are a result of improved contact resistance of the base.…”

Section: Resultssupporting

confidence: 39%

“…The dc current gain decreases to at 225 C. The decrease in at higher temperatures is expected in SiC BJTs [2]. This decrease is explained by the reduction in the emitter injection efficiency as a result of complete ionization of deep level acceptors at elevated temperatures [8]. In addition to current gain decrease, the specific on-resistance increases from 6 m cm at room temperature to 22 m cm at 275 C for a constant base current of 1 A.…”

Section: Resultsmentioning

confidence: 93%

“…Most of these results were obtained on small-area BJT devices, typically with an active area of 1 1 mm. Recently, Agarwal et al reported results on large area SiC BJTs with an active area of 0.09 cm (3 3 mm ), which showed an on-state current of A at V (on-resistance of 8.0 m cm ) [8]. However, these devices suffered from a low dc current gain of about 11, and a very high base resistance.…”

Section: Introductionmentioning

confidence: 99%

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1000-V, 30-A 4H-SiC BJTs with high current gain

Krishnaswami

Agarwal

Ryu

et al. 2005

IEEE Electron Device Lett.

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This paper presents the development of 1000 V, 30 A bipolar junction transistor (BJT) with high dc current gain in 4H-SiC. BJT devices with an active area of 3 3 mm 2 showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm 2 , at a forward voltage drop of 2 V. A common-emitter current gain of 40, along with a low specific on-resistance of 6.0 m cm 2 was observed at room temperature. These results show significant improvement over state-of-the-art. High temperature current-voltage characteristics were also performed on the large-area bipolar junction transistor device. A collector current of 10 A is observed at CE = 2 V and = 600 mA at 225 C. The on-resistance increases to 22.5 m cm 2 at higher temperatures, while the dc current gain decreases to 30 at 275 C. A sharp avalanche behavior was observed at a collector voltage of 1000 V. Inductive switching measurements at room temperature with a power supply voltage of 500 V show fast switching with a turn-off time of about 60 ns and a turn-on time of 32 ns, which is a result of the low resistance in the base.Index Terms-4H-SiC, current gain, high-speed switching, power BJT.

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Section: Resultssupporting

confidence: 39%

Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

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1000-V, 30-A 4H-SiC BJTs with high current gain

Krishnaswami

Agarwal

Ryu

et al. 2005

IEEE Electron Device Lett.

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“…Ideally, V CEoffset must be zero owing to junction cancellation from the BE and BC forward biased diodes. A finite positive value for V CEoffset , also observed previously in lower voltage SiC BJTs (2)(3)(4)(5) implies that the BE diode forward drop is greater than that of the BC diode at a given base drive current. This phenomenon can be further corroborated by the respective forward characteristics of the BE and the BC diodes as shown in Figure 7.…”

Section: Resultssupporting

confidence: 64%

4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

Balachandran

Chow

Agarwal³

et al.

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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In this paper we present 4H-SiC BJTs with open-base blocking voltage (BV CEO ) of 4000V (the upper limit for 4H-SiC BJT operation), specific on-resistance (R on,sp ) of 56 mcm 2 , and common-emitter current gain ~ 9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics.

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“…Recently, power 4H-SiC BJTs with high gains of up to 50 have been successfully demonstrated. [1][2][3][4][5][6] In this paper, a common current gain of 70 on 4H-SiC BJTs at room temperature is reported. The dynamic characteristics indicate that the SiC BJT is suitable for high-speed applications.…”

Section: Introductionmentioning

confidence: 99%

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Jonas

Capell

Burk

et al. 2007

Journal of Elec Materi

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A common current gain of 70 has been achieved in 4H-SiC bipolar junction transistors (BJTs) at room temperature, which is the highest among those reported. BJTs having an active area of 4 mm · 4 mm exhibit a specific on-resistance of 6.3 mX cm 2 at 25°C, which increases to 17.4 mX cm 2 at 250°C. BV CEO (the breakdown voltage from collector to emitter with open base) and BV CBO (the breakdown voltage from collector to base with open emitter) of 1200 V were observed at <5 lA leakage currents at all temperatures up to 250°C. Dynamic characteristics were measured using the IXYS RF/ Directed Energy IXDD415 gate driver evaluation board to drive the BJT. A collector current (I C ) rise time at turn-on of 32 ns was measured with a 1.6 A gate current provided to support the collector current of 63 A. An I C fall time at turn-off of 16 ns was achieved.

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Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC

Cited by 19 publications

References 4 publications

1000-V, 30-A 4H-SiC BJTs with high current gain

1000-V, 30-A 4H-SiC BJTs with high current gain

4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

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