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Advanced high-voltage (10 kV -15 kV) silicon carbide (SiC) power MOSFETs described in this paper have the potential to significantly impact the system performance, size, weight, high-temperature reliability, and cost of nextgeneration energy conversion and transmission systems. In this paper, we report our recently developed 10 kV/20 A SiC MOSFETs with a chip size of 8.1 × 8.1 mm 2 and a specific onresistance (R ON,SP ) of 100 mΩ⋅cm 2 at 25 °C. We also developed 15 kV/10 A SiC power MOSFETs with a chip size of 8 × 8 mm 2 and a R ON,SP of 204 mΩ⋅cm 2 at 25 °C. To our knowledge, this 15 kV SiC MOSFET is the highest voltage rated unipolar power switch. Compared to the commercial 6.5 kV Silicon (Si) IGBTs, these 10 kV and 15 kV SiC MOSFETs exhibit extremely low switching losses even when they are switched at 2-3x higher voltage. The benefits of using these 10 kV and 15 kV SiC MOSFETs include simplifying from multilevel to twolevel topology and removing the need for time-interleaving by improving the switching frequency from a few hundred Hz for Si based systems to ≥ 10 kHz for hard-switched SiC based systems.

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The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.