Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

Palmour, John W.; Cheng, Lin; Pala, Vipindas; Brunt, Edward Van; Lichtenwalner, Daniel J.; Wang, G.-Y; Richmond, Jim; O’Loughlin, Michael J.; Ryu, Sei‐Hyung; Allen, Scott T.; Burk, Albert A.; Scozzie, Charles

doi:10.1109/ispsd.2014.6855980

Cited by 244 publications

(83 citation statements)

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“…Among them, the current rating per die approaches up to 100 A, and with multiple dies in parallel, state-ofart SiC power modules on market can deliver hundreds of amperes current. On the other hand, the high voltage SiC (referred here as 3.3 kV and above) are generally in developmental stages with limited commercial availability and small current rating per die [54]. Currently SiC MOFETs are the most developed active switches, with some JFETs, IGBTs, BJTs, and thyristors also available.…”

Section: B Status Of Sic Devicesmentioning

confidence: 99%

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Wang¹,

Zhang²

2016

CPSS TPEA

163

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Section: B Status Of Sic Devicesmentioning

confidence: 99%

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Wang¹,

Zhang²

2016

CPSS TPEA

163

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“…The higher voltage devices were realized by development of SiC N-IGBTs with voltage range from 12.5 kV to beyond 20 kV [2]- [4]. Very recently, the SiC MOSFETs have been further optimized and scaled-up in voltage to 15 kV [5].…”

Section: Introductionmentioning

confidence: 99%

Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

Kadavelugu

Krishna

Patel

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper summarizes the different steps that have been undertaken to design medium voltage power converters using the state-of-the-art 15 kV SiC N-IGBTs. The 11 kV switching characterization results, 11 kV high dv/dt gate driver validation, and the heat-run test results of the SiC IGBT at 10 kV, 550 W/cm 2 (active area) have been recently reported as individual topics. In this paper, it is attempted to link all these individual topics and present them as a complete subject from the double pulse tests to the converter design, for evaluating these novel high voltage power semiconductor devices. In addition, the demonstration results of two-level H-Bridge and three-level NPC converters, both at 10 kV dc input, are being presented for the first-time. Lastly, the performance of two-chip IGBT modules for increased current capability and demonstration of three-level poles, built using these modules, at 10 kV dc input with sine-PWM and square-PWM modulation for rectifier and dc-dc stages of a three-phase solid state transformer are presented.

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“…Indeed, SiC power transistors and diodes with blocking voltages exceeding 10 kV have been recently demonstrated [1]- [3], not only with respect to the device structures and characteristics, but also in terms of operating in power electronics converters [4], [5]. The high voltage (HV) SiC power devices can be found beneficial in a variety of power electronic applications, such as transmission and distribution systems, large motor drives, pulsed-power systems and electrification of subsea operations [6].…”

Section: Introductionmentioning

confidence: 99%

Experimental study on fast-switching series-connected SiC MOSFETs

Kopacz

Peftitsis

Rąbkowski

2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 mΩ was tested using a double-pulse test circuit at blocking voltages up to 1 kV DC and currents up to 50 A. The design and experimental validation of a suitable double-pulse test setup and gate drive circuits are also shown. Moreover, the impact of additional DRC snubbers ensuring an equal voltage sharing among the series-connected transistors is also investigated.

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Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

Cited by 244 publications

References 1 publication

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

Experimental study on fast-switching series-connected SiC MOSFETs

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