Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

Kadavelugu, Arun; Krishna, M.; Patel, Dhaval; Madhusoodhanan, Sachin; Tripathi, Awneesh; Hatua, Kamalesh; Bhattacharya, Subhashish; Ryu, Sei‐Hyung; Grider, David; Leslie, Scott

doi:10.1109/apec.2015.7104530

Cited by 29 publications

(6 citation statements)

References 13 publications

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“…Fig. 8d presents the efficiency of the power supply and the evolution of the output voltage as a function of the output power for an input voltage E of 15 V. It is possible to see that the efficiency reaches 70% for an output power at 5 W. Beyond 5 W, the efficiency drops to 40% for 1 W. This is in agreement with the literature as reported in [8]. The output voltage, as seen in Fig.…”

Section: Resultssupporting

confidence: 88%

“…New power devices such as silicon carbide (SiC) metal-oxidesemiconductor field-effect transistor (MOSFET) and SiC insulatedgate bipolar transistor (IGBT) are now available with blocking voltage up to 15 kV [7][8][9]. Then, new challenges are still in the field of semiconductors designers to improve semiconductor devices but also in the field of power electronics designers to provide gate drivers with insulation voltage capabilities up to 10 kV and even up to 50 kV in the case of multi-level converters such as MMC for MV applications.…”

Section: Introductionmentioning

confidence: 99%

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Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

Sarrazin

Hanna

Lefranc

et al. 2017

IET Power Electronics

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The proposed study is about the design and experimental results of a power supply for gate drivers that can sustain 40 kV of insulation voltage with a parasitic capacitance of 4 pF. The first section focuses on insulation materials suitable for medium voltage capabilities and therefore to justify the use of polyesterimide and Teflon polytetrafluoroethylene materials. In a second step, experimental results are provided to guaranty that with a thickness of 1 mm of the insulation material, an insulation voltage of 40 kV is provided. Then, a DC-DC converter based on a series-series topology is designed and lead to a physical prototype of 5 W. The measured parasitic capacitance is 4 pF between the primary and the secondary sides.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

Sarrazin

Hanna

Lefranc

et al. 2017

IET Power Electronics

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show abstract

“…Several articles compared the flipping performance of SiC switches and Si equivalents. G. Wang et al and Arun Kadavelugu [9,10] determined that the SiC-IGBT behaviors differ significantly from Si-IGBT due to the larger band gap material, greater breakdown field strength, and high-temperature stability. When SiC-IGBT compared to Si-based switches, it was a promising material for achieving high efficiency.…”

Section: Introductionmentioning

confidence: 99%

Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications

2022

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The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient, oversized, and have trouble achieving pure sine wave voltages requirements. The efficiency of the aircraft ground power units (AGPU) can be increased by replacing existing Si-IGBT transistors with silicon carbide (SiC) IGBTs because of the physical constraints of Si-IGBT switches. The primary purpose of this research was to prove that the efficiency increase could be obtained in the case of using SiC-IGBTs in conventional AGPU systems with the realized experimental studies. In this study, three different experimental systems were discussed for this purpose. The first system was the traditional APGU system. The other two systems were single-phase test (SPT) and three-phase inverter systems, respectively. The SPT system and three-phase inverter systems were designed and implemented to compare and make analyses of Si-IGBTs and SiC-IGBTs performance. The efficiency and detailed hard switching behavior comparison were performed between the 1200-V SiC-IGBT- and 1200-V Si-IGBT-based experimental systems. The APGU system and Si-IGBT modules were examined, the switching characteristic and efficiency of the system were obtained in the first experimental study. The second experimental study was carried out on the SPT system. The single-pulse test system was created using Si-IGBTs and SiC-IGBTs switches in the second experimental system. The third experiment included a three-phase-inverter-based test system. The system was created with Si-IGBTs and SiC-IGBTs to compare the two different switch-based inverters under RL loads. The turning off and turning on processes of the IGBT switches were examined and the results were presented. The Si-IGBT efficiency was 77% experimentally in the SPT experimental system. The efficiency of the third experimental system was increased up to 95% by replacing the old Si transistor with a SiC. The efficiency of the three-phase Si-IGBT-based system was 86% for the six-switch case. The efficiencies of the SiC-IGBT-based system were increased to around 92% in the three-phase inverter system experimentally. The findings of the experimental results demonstrated that the SiC-IGBT had a faster switching speed and a smaller loss than the classical Si-IGBT. As a result of the experimental studies, the efficiency increase that could be obtained in the case of using SiC-IGBTs in conventional AGPU systems was revealed.

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“…In practice, full SiC-MOSFET modules have been on the market (1) , and GaN power devices have also been doing research and development (2) . In general, high-speed switching operations, such as highdi/dt and -dv/dt, may cause electromagnetic noise and a surge voltage in the circuits.…”

Section: Introductionmentioning

confidence: 99%

Resonance Analysis Focusing on Stray Inductance and Capacitance of Laminated Bus Bars

Hino

Wãda

2016

IEEJ Journal IA

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Extensive research has been undertaken in recent years for the development of the next generation of power devices, such as silicon carbide (SiC) and gallium nitride (GaN) devices, and high-speed switching circuits have been implemented. In such cases, high-speed switching operations may generate electromagnetic noise and a surge voltage in the power electronics circuits. Stray inductance and capacitance in the circuits are critical parameters of the noise and surge voltage. Therefore, it is important to design and analyze the stray inductance and capacitance of the direct current (DC)-side circuit of an inverter. This paper proposes a laminated bus bar design procedure in consideration of both the inductance and the capacitance of the bus bar. The effectiveness of the design procedure was tested using a buck converter circuit rated at 400 V and 70 A with an SiC MOSFET and SiC diode.

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Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

Cited by 29 publications

References 13 publications

Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications

Resonance Analysis Focusing on Stray Inductance and Capacitance of Laminated Bus Bars

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