Large Area Image Sensor Arrays

Street, R. A.

doi:10.1007/978-3-662-04141-3_4

Cited by 41 publications

(15 citation statements)

References 66 publications

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“…This large-area deposition at low temperatures (around 200 °C) has also generated considerable interest in the use of a-Si:H for large-size X-ray imagers for medical applications [1], using thereby a scintillating layer for the conversion of the X-ray photons into visible light. In the field of high-energy physics, several research groups have demonstrated that a-Si:H can be used for particle detection [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Thin‐film silicon detectors for particle detection

Wyrsch

Dunand

Miazza

et al. 2004

phys. stat. sol. (c)

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PACS 29.40 Wk, 81.05 Gc, 85.60 Bt, Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 µm). Corresponding diodes were later directly deposited on CMOS readout chips. These integrated particle sensors have been characterized using light pulse illumination and beta particle irradiation from 63 Ni and 90 Sr sources. Direct detection of single lowand high-energy beta particles have been demonstrated. The application of this new integrated particle sensor concept for medical imaging is also discussed.

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Section: Introductionmentioning

confidence: 99%

Thin‐film silicon detectors for particle detection

Wyrsch

Dunand

Miazza

et al. 2004

phys. stat. sol. (c)

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“…The hydrogenated amorphous silicon (a-Si:H) PIN photodiode and the MIS photoelectric converter are two alternative sensing elements used in indirect-conversion flat panel X-ray detectors [1,2]. The major advantage of the MIS structure over the PIN is fact that this device has the same layer sequence as the a Si:H TFT switch and therefore, they can be fabricated simultaneously resulting in an effective reduction in the lithography mask count [3].…”

Section: Introductionmentioning

confidence: 99%

Spectral response characterization of a‐Si:H‐based MIS‐type photosensors

Fernandes¹,

Vygranenko²,

Fantoni³

et al. 2008

Phys. Status Solidi (c)

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This paper reports on a method and a test setup developed to measure the transient dark current and the spectral response characteristics of a‐Si:H MIS photosensors. Using this method the segmented‐gate/SiNx/a Si:H/n+/ITO structures have been characterized under different biasing conditions. The dependences of the dark and light signals on the refresh pulse amplitude, offset voltage and pulse width were measured and analyzed. It is found that the amplitude of the timedependent component of the leakage current associated with charge trapping at the insulator‐semiconductor interface can be significantly reduced by adjusting the offset voltage. The observed bias dependence of the spectral response characteristics is explained by analyzing the charge carrier transport in the absorption layer at different wavelengths of the incident light. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Vertical integration of light sensors by deposition of a hydrogenated amorphous silicon (a-Si:H) layer on a readout chip has recently gained a lot of attention [1][2][3]. This so-called thin-film on ASIC (TFA) or thin-film on CMOS (TFC) technology offers high integration level of the detecting device and the readout electronics.…”

Section: Introductionmentioning

confidence: 99%

A novel low noise hydrogenated amorphous silicon pixel detector

Moraes

Anelli

Despeisse

et al. 2004

Journal of Non-Crystalline Solids

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Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 lm pitch based on a n-i-p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. The deposition was performed by VHF-PECVD, which enables high rate deposition up to 2 nm/s. Direct particle detection using beta particles from 63 Ni and 90 Sr sources was performed.

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Large Area Image Sensor Arrays

Cited by 41 publications

References 66 publications

Thin‐film silicon detectors for particle detection

Thin‐film silicon detectors for particle detection

Spectral response characterization of a‐Si:H‐based MIS‐type photosensors

A novel low noise hydrogenated amorphous silicon pixel detector

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