Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

Li, Jiaqi; Li, Min; Chen, Zhaofeng; Shao, Shuangshuang; Gu, Weibing; Gu, Yajia; Fang, Yuxiao; Zhao, Jianwen

doi:10.1039/d2nr07209b

Cited by 5 publications

(2 citation statements)

References 58 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to their unique physical properties, including high carrier mobility, small intrinsic capacitance, large saturation velocity, and atomic thickness, carbon nanotube-based electronics have attracted extensive attention for future electronic digital [1][2][3][4], radiofrequency [5][6][7], flexible [8][9][10], and radiation-hardened devices [11,12]. After decades of development, great progress has been made by academics, such as in wafer-scale materials with 99.99997% purity [13], transistors better than silicon ones with the same feature size [14,15], and the demonstration of all sorts of integrated circuit (IC) [16][17][18], 3D architectures [19][20][21], radio-frequency (RF) amplifiers within the 5G band [5,6], and even industrial foundries [22].…”

Section: Introductionmentioning

confidence: 99%

Solution-Processed Carbon Nanotube Field-Effect Transistors Treated by Material Post-Treatment Approaches

Li,

Yang,

Xiu

et al. 2023

Electronics

View full text Add to dashboard Cite

The preparation of semiconducting carbon nanotube (s-CNT) thin films by solution processing has become the mainstream approach nowadays. However, residual polymers are always inevitable during the sorting of s-CNTs in solution. These residual polymers will degrade the electrical properties of the CNTs. Although several post-treatment approaches have been reported to be effective in improving the performance of the device, there is no deep analysis and comprehensive comparison of these approaches, so there is no overall guidance on the optimum treatment of CNTs for performance improvement. In this work, we characterize CNT thin film with three post-treatment methods, including annealing (A), yttrium oxide coating and decoating (Y), and annealing combined with YOCD (A + Y), and evaluate and compare the performance of Field Effect Transistors (FETs) based on the above mentioned CNT thin film. The result shows that the CNT thin film treated by the A + Y method is the clearest and flattest; the average roughness determined from the overall AFM image is reduced by 28% (from 1.15–1.42 nm (O) to 0.826–1.03 nm (A + Y)), which is beneficial in improving the device contact quality, uniformity, and stability. The on-state current (Ion) of the FETs with CNTs treated by A, Y, and A + Y is improved by 1.2 times, 1.5 times, and 1.75 times, respectively, compared with that of FETs fabricated by untreated CNTs (O for original CNTs), indicating that the A + Y is the optimum post-treatment method for the A + Y and combines the effect of the other two methods. Accordingly, the contact and channel resistance (2Rc and Rch) of the CNT FETs treated by different post-treatment methods including A, Y, and A + Y is reduced by 0.18/0.24 times, 0.37/0.32 times, and 0.48/0.41 times, respectively. The ratio of improvement in device performance is about 1:2 for the contact and channel sections for a transistor with a 500 nm channel length, and this ratio will go up further with the channel length scaling; together with the decay in the channel resistance optimization effect in the scaling device, it is necessary to adopt more methods to effectively reduce the contact resistance further.

show abstract

Section: Introductionmentioning

confidence: 99%

Solution-Processed Carbon Nanotube Field-Effect Transistors Treated by Material Post-Treatment Approaches

Li,

Yang,

Xiu

et al. 2023

Electronics

View full text Add to dashboard Cite

show abstract

“…Presently, extensive research has been conducted to modulate the device threshold voltage. For instance, utilizing aluminum (Al) and titanium (Ti) as gate electrodes, , chemical doping, − and self-assembly processes , have been explored to achieve low-power-consumption enhancement-mode transistor devices. However, these methods often need a complicated fabrication process, and as-prepared transistor devices exhibit a small threshold voltage modulation window and low fault tolerance, hindering their large-scale integration in integrated circuits and neuromorphic chip.…”

mentioning

confidence: 99%

Enhancement-Mode Carbon Nanotube Optoelectronic Synaptic Transistors with Large and Controllable Threshold Voltage Modulation Window for Broadband Flexible Vision Systems

Wang,

Li,

Yang

et al. 2024

ACS Nano

Self Cite

View full text Add to dashboard Cite

The development of large-scale integration of optoelectronic neuromorphic devices with ultralow power consumption and broadband responses is essential for highperformance bionics vision systems. In this work, we developed a strategy to construct large-scale (40 × 30) enhancementmode carbon nanotube optoelectronic synaptic transistors with ultralow power consumption (33.9 aJ per pulse) and broadband responses (from 365 to 620 nm) using low-work function yttrium (Y)-gate electrodes and the mixture of eco-friendly photosensitive Ag 2 S quantum dots (QDs) and ionic liquids (ILs)-cross-linking-poly(4-vinylphenol) (PVP) (ILs-c-PVP) as the dielectric layers. Solution-processable carbon nanotube thin-film transistors (TFTs) showed enhancement-mode characteristics with the wide and controllable threshold voltage window (−1 V∼0 V) owing to use of the low-work-function Ygate electrodes. It is noted that carbon nanotube optoelectronic synaptic transistors exhibited high on/off ratios (>10 6 ), small hysteresis and low operating voltage (≤2 V), and enhancement mode even under the illumination of ultraviolet (UV, 365 nm), blue (450 nm), and green (550 nm) to red (620 nm) pulse lights when introducing eco-friendly Ag 2 S QDs in dielectric layers, demonstrating that they have the strong fault-tolerant ability for the threshold voltage drifts caused by various manufacturing scenarios. Furthermore, some important bionic functions including a high paired pulse facilitation index (PPF index, up to 290%), learning and memory function with the long duration (200 s), and rapid recovery (2 s). Pavlov's dog experiment (retention time up to 20 min) and visual memory forgetting experiments (the duration of high current for 180 s) are also demonstrated. Significantly, the optoelectronic synaptic transistors can be used to simulate the adaptive process of vision in varying light conditions, and we demonstrated the dynamic transition of light adaptation to dark adaptation based on lightinduced conditional behavior. This work undoubtedly provides valuable insights for the future development of artificial vision systems.

show abstract

Printed triboelectric nanogenerator for self-powered devices: Ink formulation of printed materials and smart integrated devices

Jiang,

Zheng,

Hou

et al. 2024

Nano Energy

View full text Add to dashboard Cite

Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

Abstract: A universal roll-to-roll (R2R) printing approach was developed to construct large area (8 cm × 14 cm) semiconducting single-walled carbon nanotubes (sc-SWCNT) thin films on flexible substrates ( such as...

Cited by 5 publications

References 58 publications

Solution-Processed Carbon Nanotube Field-Effect Transistors Treated by Material Post-Treatment Approaches

Solution-Processed Carbon Nanotube Field-Effect Transistors Treated by Material Post-Treatment Approaches

Enhancement-Mode Carbon Nanotube Optoelectronic Synaptic Transistors with Large and Controllable Threshold Voltage Modulation Window for Broadband Flexible Vision Systems

Printed triboelectric nanogenerator for self-powered devices: Ink formulation of printed materials and smart integrated devices

Contact Info

Product

Resources

About