Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells

Abstract

Large-area ZnO Films with high-transparency and high-conductivity were successfully grown on the 10xlOcmz substrates by photo-MOCVD technique at a very low temperature of 135°C. The films have a good uniformity in thickness, resistivity and crystallinity with a deviation level of 5%. The obtained ZnO films were applied to a-Si solar ceUs as a TCO and a conversion efficiency of as high as 12.0% (AM-1.5, area 3mmx3mm) was obtained.