Large electronic-density increase on cooling a layered metal: Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Te</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow><

Thomas, G. A.; Rapkine, D. H.; Dover, R. B. van; Mattheiss, L. F.; Sunder, W. A.; Schneemeyer, Lynn; Waszczak, J. V.

doi:10.1103/physrevb.46.1553

Cited by 102 publications

(56 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This value is in a good agreement with optical measurements carried out in Ref. [7]. For antimony telluride Sb 2 Te 3 the optical band gap is E g ¼ 0.21 eV [8].…”

Section: Introductionsupporting

confidence: 80%

Influence of Sn on Galvanomagnetic Properties of Layered p-(Bi1?xSbx)2Te3 Semiconductors

Kulbachinskii

Kaminsky

Kindo

et al. 2002

phys. stat. sol. (b)

View full text Add to dashboard Cite

The temperature dependence of the resistivity and the Hall effect in the range 0.3-300 K, and the Shubnikov-de Haas effect have been investigated in Sn-doped p-(Bi 1Àx Sb x ) 2 Te 3 ð0 x 1:0Þ single crystals. Doping of (Bi 1Àx Sb x ) 2 Te 3 with tin showed that Sn exhibits acceptor properties in all crystals. The anomalous temperature and magnetic field behavior of the Hall coefficient was explained quantitatively by a model, which involves the complicated two-valence band structure of p-(Bi 1Àx Sb x ) 2 Te 3 . The quantization of the Hall resistivity r H in the form of plateaus in the dependence of r H on the magnetic field B is observed. The minima of the transverse magnetoresistivity r correspond to the start of plateaus. The oscillation of r H is due to the presence of a carrier reservoir. An impurity resonant band with a high density of states in Sb 2 Te 3 or the second lower valence band with a higher hole effective mass in (Bi 1Àx Sb x ) 2 Te 3 serves as the reservoir. The valence band structure of (Bi 1Àx Sb x ) 2 Te 3 is also discussed.

show abstract

“…This value is in a good agreement with optical measurements carried out in Ref. [7]. For antimony telluride Sb 2 Te 3 the optical band gap is E g ¼ 0.21 eV [8].…”

Section: Introductionsupporting

confidence: 80%

Influence of Sn on Galvanomagnetic Properties of Layered p-(Bi1?xSbx)2Te3 Semiconductors

Kulbachinskii

Kaminsky

Kindo

et al. 2002

phys. stat. sol. (b)

View full text Add to dashboard Cite

show abstract

“…We find that the spin-orbit coupling introduces significant changes in the band structure for Bi 2 Te 3 in the gap region (which is consistent with the results of Thomas et al [11]), but it has very little effect for Bi 2 Se 3 . In fact, for the former, without the spin-orbit coupling effects, one obtains a single-valley valence-band maximum and the same for the conduction-band minimum, both occurring at the point.…”

supporting

confidence: 82%

“…To our knowledge, the only density-functional calculation for Bi 2 Te 3 reported in the literature was performed by Thomas et al [11] using the LAPW method. However, in their calculation, even though the spin-orbit coupling effects were recognized to be large and significant, the spin-orbit coupling was included only empirically with a tight-binding fitting procedure, which was not adequate for describing the important details of the valence-and conduction-band valleys of these materials, which are small-band-gap semiconductors.…”

mentioning

confidence: 99%

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

Mishra

Satpathy

Jepsen

1997

J. Phys.: Condens. Matter

494

357

View full text Add to dashboard Cite

Abstract. The electronic structures of the two thermoelectric materials Bi 2 Te 3 and Bi 2 Se 3 are studied using density-functional theory with the spin-orbit interaction included. The electron states in the gap region and the chemical bonding can be described in terms of ppσ interaction between the atomic p orbitals within the 'quintuple' layer. For Bi 2 Se 3 , we find both the valenceband maximum as well as the conduction-band minimum, each with a nearly isotropic effective mass, to occur at the zone centre in agreement with experimental results. For Bi 2 Te 3 , we find that the six valleys for the valence-band maximum are located in the mirror planes of the Brillouin zone and they have a highly anisotropic effective mass, leading to an agreement between the de Haas-van Alphen data for the p-doped samples and the calculated Fermi surface. The calculated conduction band, however, has only two minima, instead of the six minima indicated from earlier experiments. The calculated Seebeck coefficients for both p-type and n-type materials are in agreement with the experiments.

show abstract

“…Their onset value did not exhibit a significant blue shift with cooling to 10 K. A direct gap was observed in Ref. 49 at 220 meV with a weak onset at 150 meV on relatively highly doped Bi 2 Te 3 . The difference in the reported values is presumably caused by differences in the doping level and related MB shift and/or by a difference in the definition of the onset energy.…”

Section: B the Absorption Edge In Bi2se3mentioning

confidence: 81%

Interband absorption edge in the topological insulators Bi2(Te1−xSex)3

et al. 2017

View full text Add to dashboard Cite

We have investigated the optical properties of thin films of topological insulators Bi2Te3, Bi2Se3 and their alloys Bi2(Te1−xSex)3 on BaF2 substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi2Se3, after the correction for the Burstein-Moss effect, we find the value of direct bandgap of 215±10 meV at 10 K. Our data supports the picture that Bi2Se3 has a direct band gap located at the Γ point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward oriented paraboloid, i.e. without a camel-back structure. In Bi2Te3, the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent GW band structure calculations suggesting that the direct interband transition does not occur at the Γ point but near the Z-F line of the Brillouin zone. In the Bi2(Te1−xSex)3 alloy, the energy of the onset of direct interband transitions exhibits a maximum near x = 0.3 (i.e. the composition of Bi2Te2Se), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.

show abstract

Large electronic-density increase on cooling a layered metal: DopedBi2Te3<

Cited by 102 publications

References 26 publications

Influence of Sn on Galvanomagnetic Properties of Layered p-(Bi1?xSbx)2Te3 Semiconductors

Influence of Sn on Galvanomagnetic Properties of Layered p-(Bi1?xSbx)2Te3 Semiconductors

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

Interband absorption edge in the topological insulators Bi2(Te1−xSex)3

Contact Info

Product

Resources

About