Large linewidth reduction in semiconductor lasers based on atom-like gain material

Septon, Tali; Becker, Annette; Gosh, Sutapa; Shtendel, Gal; Sichkovskyi, Vitalii; Schnabel, Florian; Sengül, Anna; Bjelica, Marko; Witzigmann, Bernd; Reithmaier, Johann Peter; Eisenstein, G.

doi:10.1364/optica.6.001071

Cited by 47 publications

(22 citation statements)

References 32 publications

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“…One important aspect of QD lasers is the small -factor that contributes to significant reductions in the laser linewidth [36] The state-of-the-art 1550 nm InAs/InP QD DFB lasers can achieve linewidths of less than 50 kHz by applying a very low reflectivity antireflection coating (AR) on both facets. [37] For 1300 nm InAs/GaAs QD DFB lasers, the first excited state can be easily populated when increasing the bias.…”

Section: Measurement and Analysismentioning

confidence: 99%

“…[37] For 1300 nm InAs/GaAs QD DFB lasers, the first excited state can be easily populated when increasing the bias. [36] This leads to an asymmetric gain spectrum with increased -factor, and consequently much larger linewidths. However, with highly uniform dot size distributions, the -factor of our InAs/GaAs QD lasers can be as low as 0.13.…”

Section: Measurement and Analysismentioning

confidence: 99%

See 1 more Smart Citation

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Wan

Norman

Tong

et al. 2020

Laser & Photonics Reviews

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Distributed feedback (DFB) lasers represent a central focus for wavelength‐division‐multiplexing‐based transceivers in metropolitan networks. Here, the first 1.3 µm quantum dot (QD) DFB lasers grown on a complementary metal‐oxide‐semiconductor (CMOS)‐compatible (001) Si substrate are reported. Temperature‐stable, single‐longitudinal‐mode operation is achieved with a side‐mode suppression ratio of more than 50 dB and a threshold current density of 440 A cm−2. A single‐lane rate of 128 Gbit s−1 with a net spectral efficiency of 1.67 bits−1 Hz−1 is demonstrated, with an aggregate total transmission capacity of 640 Gbit s−1 using five channels in the O‐band. Apart from the QD active region growth, the overall fabrication is essentially identical to the commercial process for quantum well (QW) DFB lasers. This provides a process‐compatible path for QD technology into commercial applications previously filled by QW devices. In addition, the capability to grow laser epi across entire CMOS‐compatible (001) Si wafers adds extra benefits of reduced cost, improved heat dissipation, and manufacturing scalability. Through direct epitaxial integration of III–Vs and Si, one can envision a revolution of the photonics industry in the same way that CMOS design and processing revolutionize the microelectronics industry. This is discussed from a system perspective for on‐chip optical interconnects.

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Section: Measurement and Analysismentioning

confidence: 99%

Section: Measurement and Analysismentioning

confidence: 99%

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Wan

Norman

Tong

et al. 2020

Laser & Photonics Reviews

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“…As a complementary derivation to the one followed above, focusing on the RRM as a light storage element, one can also observe that the phase noise to intensity noise conversion seen here arises from the dispersion inherent to the resonator transfer function, similarly to phase to amplitude noise conversion during propagation over long segments of dispersive fiber [23]. This dispersion is zeroed on resonance due to the symmetricity of the transfer function, similarly to the zeroing of the linewidth broadening factor in lasers (also corresponding to phase noise to intensity noise conversion) when using ideal atomic like gain media with a symmetric gain spectrum [24].…”

Section: #$mentioning

confidence: 63%

Laser Phase Noise in Ring Resonator Assisted Direct Detection Data Transmission

Nojić

Tabatabaei-Mashayekh

Rahman

et al. 2021

IEEE J. Select. Topics Quantum Electron.

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We introduce an analytical model describing the statistical and spectral properties of laser phase noise induced intensity noise in ring-resonator-based modulation. The model is validated with single sideband orthogonal frequency division multiplexing (SSB-OFDM) implemented with a silicon photonics resonantly-assisted Mach-Zehnder modulator (RA-MZM). Excellent agreement of experimental data with full link simulations, in which phase noise conversion is treated with the analytical model, confirms its validity. Moreover, we demonstrate 30 Gb/s raw data rate transmission with SSB-OFDM over 20 km of single-mode fiber with a bit error ratio below the 20% forward error correction (FEC) limit for three independently run channels of the RA-MZM, each supplied with off-the-shelf 1 MHz linewidth distributed feedback lasers.

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“…On one hand, InAs QDs grown on GaAs substrate are ideal for a wide range of short-reach communications (1260–1360 nm) that is to say for integrated technologies, sensing, compact laser-based radars, and high performance computing 15 , 20 , 21 . On the other hand, InAs QDs grown on InP substrates are more prone to long-reach communications (1530–1565 nm) namely for access, metro and core optical networks 22 , 23 . High performance InAs/InP QD lasers can be achieved, however, compared with InAs/GaAs, the formation of “true” InAs QDs on InP is more challenging since the lattice mismatch in InAs/InP (3%) is smaller than that in InAs/GaAs (7%) 21 .…”

Section: Introductionmentioning

confidence: 99%

“…It is noted that every AR/HR laser may also exhibit different spectral linewidth characteristics and random facet phase effects which can be problematic for practical and industrial applications. Recently, a narrow intrinsic linewidth of 30 kHz has also been obtained in a high performance QD DFB laser 23 . Fig.…”

Section: Introductionmentioning

confidence: 99%

Uncovering recent progress in nanostructured light-emitters for information and communication technologies

et al. 2021

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Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices. When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength, nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others. This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures. Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources. Here, we link the material and fundamental properties with the device physics. For this purpose, spectral linewidth, polarization anisotropy, optical nonlinearities as well as microwave, dynamic and nonlinear properties are closely examined. The paper focuses on photonic devices grown on native substrates (InP and GaAs) as well as those heterogeneously and epitaxially grown on silicon substrate. This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society.

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Large linewidth reduction in semiconductor lasers based on atom-like gain material

Cited by 47 publications

References 32 publications

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Laser Phase Noise in Ring Resonator Assisted Direct Detection Data Transmission

Uncovering recent progress in nanostructured light-emitters for information and communication technologies

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