1997
DOI: 10.1016/s0022-0248(96)00912-8
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Large mismatch heteroepitaxy of InSb on Si(1 1 1) substrates using CaF2 buffer layers

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Cited by 4 publications
(4 citation statements)
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“…However, due to the increase of the anion vacancy concentration on approaching the surface, the sum of both charge carriers increases considerably above that in the bulk. This should cause, in addition, an increased ionic conductivity in the near-surface region of the crystal as well as in thin fluorite crystal layers [13]. The latter case will be treated in the next section in greater detail.…”
Section: Semi-infinite Crystalmentioning
confidence: 97%
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“…However, due to the increase of the anion vacancy concentration on approaching the surface, the sum of both charge carriers increases considerably above that in the bulk. This should cause, in addition, an increased ionic conductivity in the near-surface region of the crystal as well as in thin fluorite crystal layers [13]. The latter case will be treated in the next section in greater detail.…”
Section: Semi-infinite Crystalmentioning
confidence: 97%
“…19) in appendix A, using (A.12) and (A. 13), the course of the potential (x) in the space-charge layer, and with this the dependence of the vacancy and interstitial concentrations on the distance from the surface, x, as well as the respective surface concentrations, can be calculated:…”
Section: Semi-infinite Crystalmentioning
confidence: 99%
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“…Presently, calcium fluoride has attracted much attention because it is a possible candidate for epitaxial overgrowth of silicon and hence for the formation of three-dimensional integrated devices [19,20]. CaF 2 is further an efficient host material for the incorporation of rare-earth ions, allowing laser action [21].…”
Section: Introductionmentioning
confidence: 99%