Large recoverable energy density with excellent thermal stability in Mn‐modified NaNbO₃‐CaZrO₃ lead‐free thin films

Abstract

Effect of Mn dopant on energy storage properties in lead-free NaNbO 3 À0.04CaZrO 3 (NNCZ) thin films was investigated. The leakage current was largely suppressed, whereas dielectric constant, breakdown fields, and the difference between maximum polarization and remnant polarization were improved significantly by Mn doping, resulting in a large enhancement of energy storage performance. A large recoverable energy storage density of~19.64 J/cm 3 and an excellent thermal stability (from 30 to 160°C) were simultaneously achieved in the NNCZ thin film with 1 mol% Mn addition. Our results ascertain the great potential of NNCZ lead-free thin films for the applications in energy storage devices over a wide temperature range.electrical properties, energy harvesting, lead-free ceramics, sodium/sodium compounds, thin films

High‐recoverable energy‐storage density and dielectric tunability in Eu3+‐doped NBT‐xSTO binary solid solution films

“…Due to the higher breakdown strength, Eu-NBT-0.3STO thin film has a high W r of 31.5 J cm −3 and η of 64% under an applied field of 2.2 MV cm −1 (see Table 1). These results are comparable to the recently reported values of lead-based thin films prepared on Pt/Ti/SiO 2 /Si substrates and some other binary solid solution films, [43][44][45][46][47][48] as shown in Figure 10B.…”

“…A, W r and η for Eu‐NBT‐ x STO ( x = 0.24, 0.3, 0.4) films under various electric fields; (B) W r and η for Pb 0.9 La 0.1 (Zr 0.52 Ti 0.48 )O 3 (PLZT‐1), Pb 0.91 La 0.09 (Ti 0.65 Zr 0.35 )O 3 (PLZT‐2), PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 (PZ/PZT) multilayer, 0.94Na 0.5 Bi 0.5 TiO 3 ‐0.06BaTiO 3 (NBT‐BT), Mn‐doped NaNbO 3 ‐0.04CaZrO 3 (Mn‐NN‐CZ), Ba(Zr 0.2 Ti 0.8 )O 3 (BZT), and Eu‐NBT‐0.3STO (This work) thin film [Color figure can be viewed at wileyonlinelibrary.com]…”

Antiferroelectric NaNbO3 ceramics prepared by hydrothermal-assisted cold sintering process

“…However, most antiferroelectric materials are PbZrO 3 based compounds with a high content of toxic element Pb. To reduce environmental hazards, lead-free antiferroelectric materials like AgNbO 3 and NaNbO 3 based have been studied extensively [9][10][11]. Generally, AgNbO 3 ceramics are sintered with an O 2 atmosphere, which increases the complexity of processing.…”

Progress and perspectives in dielectric energy storage ceramics

“…Recently, Beppu et al [212] obtained W rec only of 2.9 J/cm 3 for 0.92NN-0.08SZ thin films at E b ≈ 400 kV/cm. In addition, Luo et al [213] fabricated Mn-doped 0.96NaNbO 3 -0.04CaZrO 3 (0.96NN-0.04CZ) thin films using sol-gel method, and leakage current of 1 mol% Mn reduces the magnitude of 10 3 -10 4 compared to pure compositions. W rec and  of 1 mol% Mn thin films are19.64 J/cm 3 and 64.5%, respectively.…”