Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

Li, Na; Wang, Qinqin; Shen, Cheng; Zheng, Wei; Yu, Hua; Zhao, Jing; Lu, Xiaobo; Wang, Guole; He, Congli; Xie, Li; Zhu, Jiaojun; Du, Luojun; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

doi:10.1038/s41928-020-00475-8

Cited by 322 publications

(272 citation statements)

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“…2D transition metal dichalcogenides (TMDCs) have attracted enormous interests recently due to their excellent electrical/optical properties and versatile applications for wearable devices, photodetectors, sensors, and integrated circuits. [ 1–6 ] Doping is an effective strategy to tailor their properties for practical applications. For example, photoluminescence (PL) quenching and bandgap decrease were observed in doped TMDC films; [ 7–14 ] doping could also increase their electrical conductivities and catalytic activities.…”

Section: Introductionmentioning

confidence: 99%

Wafer‐Scale Oxygen‐Doped MoS₂ Monolayer

Zheng

Tang

et al. 2021

Small Methods

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Monolayer MoS2 is an emergent 2D semiconductor for next‐generation miniaturized and flexible electronics. Although the high‐quality monolayer MoS2 is already available at wafer scale, doping of it uniformly remains an unsolved problem. Such doping is of great importance in view of not only tailoring its properties but also facilitating many potential large‐scale applications. In this work, the uniform oxygen doping of 2 in wafer‐scale monolayer MoS2 (MoS2−xOx) with tunable doping levels is realized through an in situ chemical vapor deposition process. Interestingly, ultrafast infrared spectroscopy measurements and first‐principles calculations reveal a reduction of bandgaps of monolayer MoS2−xOx with increased oxygen‐doping levels. Field‐effect transistors and logic devices are also fabricated based on these wafer‐scale MoS2−xOx monolayers, and excellent electronic performances are achieved, exhibiting promise of such doped MoS2 monolayers.

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Section: Introductionmentioning

confidence: 99%

Wafer‐Scale Oxygen‐Doped MoS₂ Monolayer

Zheng

Tang

et al. 2021

Small Methods

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“…[ 8–12 ] Chemical vapor deposition (CVD) has proven to be promising for synthesizing high‐quality TMDCs monolayers, due to its excellent controllability, scalability, and cost effectiveness. [ 11,13–17 ] To obtain large‐sized single crystals via CVD, remarkably reducing the nucleation density in the initial growth process is critical, as commonly realized by keeping sufficiently low precursor supply rate (e.g., inserting precursor diffusion barriers, [ 18 ] introducing etching agent (e.g., O 2 ), [ 19 ] or using an extremely small amount of precursors [ 20 ] ), to minimize undesired nucleation and multi‐layer growth. However, this growth strategy usually leads to a slow lateral growth rate (typically ≈1 µm s −1 or less) and ultra‐low production efficiency.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe₂ Single Crystals on Low‐Cost Soda‐Lime Glass

Zhang

Zhu

Wang

et al. 2021

Adv Materials Inter

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2D semiconducting transition metal dichalcogenides (TMDCs) have emerged as essential building blocks for engineering next‐generation integrated electronics. To achieve this, the controllable synthesis of monolayer TMDCs with high crystal quality, low cost, and high yield is crucial, while it remains challenging. Herein, the direct synthesis of large‐area uniform, millimeter‐size monolayer MoSe2 single crystals on a 6‐centimeter‐long soda‐lime glass template, by using a designed “beam‐bridge” assisted metal oxide precursor feeding strategy via chemical vapor deposition (CVD), is reported. Notably, several tenths of millimeter‐scale, triangular‐shaped monolayer MoSe2 single crystals are obtained in one batch within 25 s’ growth, affording so far the fastest growth rate (≈50 µm s−1). This ultrafast growth behavior is proposed to be mediated by the sufficient, homogeneous release of Mo‐based precursor, the catalytic property of sodium atoms on soda‐lime glass substrate, as well as the improved surface kinetics on the molten glass surface. Moreover, the thickness‐controlled growth from monolayer to bilayers is also realized. This work provides brand new insights for the batch production of large single‐crystal TMDCs, which should propel its practical applications in versatile fields.

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“…The synthesis of high-quality TMD materials requires the precise feeding control of both the transition metal and chalcogen precursors as well. In the past decade, intensive efforts have been devoted to optimizing the feeding of metal precursors by thermal evaporation or molten-saltassisted evaporation of metal oxide 14 , decomposition of metal-organic precursor 15 , direct deposition of metal layers, and others [16][17][18] . Although some methods for controllable chalcogen feeding, such as using either elemental chalcogen or chalcogen compounds (i.e., heating sulfur powder, using H2S gas and ammonium sulphide [19][20][21], have also been developed, it turns out that the chalcogen feeding control is much less effective than metal feeding control, as indicated by the most challenging problem in TMD quality control that the most synthesized TMDs are rich with chalcogen vacancies 25 .…”

Section: / 30mentioning

confidence: 99%

“…Similar to that in III-V semiconductor synthesis, the precise precursor supply is a precondition for controllable growth of TMDs. Although great efforts have been devoted to modulate the transition metal supply, few effective methods of chalcogen feeding control were developed [14][15][16][17][18][19][20][21] . Herein we report a strategy of using active chalcogen monomer supply to grow TMDs and their alloys in a robust and controllable manner.…”

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confidence: 99%

Robust synthesis of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

Liu

Zuo

Liu

et al. 2021

Preprint

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Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their atomic thicknesses, high carrier mobility, fast charge transfer, and intrinsic spin-valley couplings, have been demonstrated one of the most appealing candidates for next-generation electronic and optoelectronic devices. The synthesis of TMDs with well-controlled crystallinity, quality and composition is essential to fully realize their promising applications. Similar to that in III-V semiconductor synthesis, the precise precursor supply is a precondition for controllable growth of TMDs. Although great efforts have been devoted to modulate the transition metal supply, few effective methods of chalcogen feeding control were developed. Herein we report a strategy of using active chalcogen monomer supply to grow TMDs and their alloys in a robust and controllable manner. It is found that at a high temperature, the active chalcogen monomers (such as S, Se, Te atoms or their mixtures) can be controllably released from metal chalcogenides and, thus, enable the synthesis of TMDs (MX2, M = Mo, W; X = S, Se, Te) with very high quality, e.g., MoS2 monolayers exhibit photoluminescent circular helicity of ~92%, comparable to the best exfoliated single-crystal flakes and close to the theoretical limit of unity. More intriguingly, a uniform quaternary TMD alloy with three different anions, i.e., MoS2(1-x-y)Se2xTe2y, was accomplished for the first time. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation and reaction, quick chalcogen vacancy healing, and alloy formation during the growth. The chalcogen monomer supply strategy offers more degrees of freedom for the controllable synthesis of 2D compounds and their alloys, which will greatly benefit the development of high-end devices with desired 2D materials.

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Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

Cited by 322 publications

References 50 publications

Wafer‐Scale Oxygen‐Doped MoS₂ Monolayer

Wafer‐Scale Oxygen‐Doped MoS₂ Monolayer

Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe₂ Single Crystals on Low‐Cost Soda‐Lime Glass

Robust synthesis of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

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Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

Cited by 322 publications

References 50 publications

Wafer‐Scale Oxygen‐Doped MoS2 Monolayer

Wafer‐Scale Oxygen‐Doped MoS2 Monolayer

Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe2 Single Crystals on Low‐Cost Soda‐Lime Glass

Robust synthesis of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

Contact Info

Product

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Wafer‐Scale Oxygen‐Doped MoS₂ Monolayer

Wafer‐Scale Oxygen‐Doped MoS₂ Monolayer

Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe₂ Single Crystals on Low‐Cost Soda‐Lime Glass